n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature
Moscatelli F;Nipoti R;Poggi A
2005
Abstract
n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.File in questo prodotto:
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