The effects of hydrogen incorporation on carrier relaxation and recombination efficiencies in a large series of InAs self-assembled quantum dot structures deposited on InGaAs lower confining layers with different thicknesses and compositions have been addressed. With increasing H dose we observe an improvement in the radiative efficiency. By comparing steady state and time resolved photoluminescence measurements, it is established that the H passivation does not enhance the relaxation and capture efficiencies, but instead directly improves the emission yield from carriers in the dots. We therefore conclude that the H-passivated defects are located nearby, or even inside, the dots.
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
Seravalli L.;Frigeri P.;Franchi S.
2006
Abstract
The effects of hydrogen incorporation on carrier relaxation and recombination efficiencies in a large series of InAs self-assembled quantum dot structures deposited on InGaAs lower confining layers with different thicknesses and compositions have been addressed. With increasing H dose we observe an improvement in the radiative efficiency. By comparing steady state and time resolved photoluminescence measurements, it is established that the H passivation does not enhance the relaxation and capture efficiencies, but instead directly improves the emission yield from carriers in the dots. We therefore conclude that the H-passivated defects are located nearby, or even inside, the dots.File | Dimensione | Formato | |
---|---|---|---|
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures.pdf
solo utenti autorizzati
Descrizione: Articolo
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
89.19 kB
Formato
Adobe PDF
|
89.19 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.