300 ?m thick 3C-SiC epilayer was grown on off-axis 4H-SiC(0001) substrate with a high growth rate of 1 mm/hour. Dry oxidation, wet oxidation and N2O anneal were applied to fabricate lateral MOS capacitors on these 3C-SiC layers. MOS interface obtained by N2O anneal has the lowest interface trap density of 3~4x10 eVcm. Although all MOS capacitors still have positive net charges at the MOS interface, the wet oxidised sample has the lowest effective charge density of ~9.17x10 cm.
Electrical characterisation of thick 3C-SiC layers grown on off-axis 4H-SiC substrates
Roccaforte F;Lavia F
2019
Abstract
300 ?m thick 3C-SiC epilayer was grown on off-axis 4H-SiC(0001) substrate with a high growth rate of 1 mm/hour. Dry oxidation, wet oxidation and N2O anneal were applied to fabricate lateral MOS capacitors on these 3C-SiC layers. MOS interface obtained by N2O anneal has the lowest interface trap density of 3~4x10 eVcm. Although all MOS capacitors still have positive net charges at the MOS interface, the wet oxidised sample has the lowest effective charge density of ~9.17x10 cm.File in questo prodotto:
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