The specific contact resistance rho(c) was determined by the Transmission Line Method for different substrate carrier concentrations N-D, Ohmic contacts with rho(c)=3.9x10(-5)Ohmcm(2) were obtained for substrates with N-D=7.4x10(18)cm(-3).
The structural and electrical characterization of nickel silicide (Ni2Si) contacts on n-type silicon carbide, obtained by rapid thermal annealing of Ni/6H-SiC at 950degreesC in N-2 for 60s, was performed. The phase formation was investigated by means of X-Ray diffraction, while the silicide/SiC barrier height was determined by the I-V characteristic of Ni2Si/6H-SiC Schottky diodes. The diodes obtained with this process showed a nearly ideal behaviour (n<1.1) and a barrier height Phi(B)= 1.42eV.
Electrical characterization of nickel silicide contacts on silicon carbide
Roccaforte F;La Via F;
2002
Abstract
The structural and electrical characterization of nickel silicide (Ni2Si) contacts on n-type silicon carbide, obtained by rapid thermal annealing of Ni/6H-SiC at 950degreesC in N-2 for 60s, was performed. The phase formation was investigated by means of X-Ray diffraction, while the silicide/SiC barrier height was determined by the I-V characteristic of Ni2Si/6H-SiC Schottky diodes. The diodes obtained with this process showed a nearly ideal behaviour (n<1.1) and a barrier height Phi(B)= 1.42eV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
