Wafer bending is a serious problem that affects the growth of cubic silicon carbide on silicon. Thermal and lattice mismatch are often cited as the causes of stress in this system, but they alone cannot account for severe wafer warp seen in many cases. This work proposes diffusion-induced stress as a new mechanism that can explain the extreme degree of bending observed.
A novel mechanism to explain wafer bending during the growth of SiC films on Si
Watts B E;Attolini G;Bosi M;Frigeri C
2008
Abstract
Wafer bending is a serious problem that affects the growth of cubic silicon carbide on silicon. Thermal and lattice mismatch are often cited as the causes of stress in this system, but they alone cannot account for severe wafer warp seen in many cases. This work proposes diffusion-induced stress as a new mechanism that can explain the extreme degree of bending observed.File in questo prodotto:
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