Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 ° C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 ° C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 ° C a main level at E,443 eV (E-1/E-2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E-1/E-2 level is mainly responsible for the luminescence quenching after irradiation.
Defect evolution in ion irradiated 6H-SiC epitaxial layers
Roccaforte F;Libertino S;La Via F;
2005
Abstract
Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 ° C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 ° C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 ° C a main level at E,443 eV (E-1/E-2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E-1/E-2 level is mainly responsible for the luminescence quenching after irradiation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
