The electrical characteristics of 4H-SiC Schottky diodes were performed in the temperature range 80-700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm(2)/(V s) was found, which decreased to 48.6 cm(2)/ (V s) at 700 K. In the temperature range 200-700 K, a dependence of the mobility as T-3 was determined, that can be correlated to the presence of material defects.
Temperature dependence of the c-axis drift mobility in 4H-SIC
Roccaforte F;La Via F
2006
Abstract
The electrical characteristics of 4H-SiC Schottky diodes were performed in the temperature range 80-700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm(2)/(V s) was found, which decreased to 48.6 cm(2)/ (V s) at 700 K. In the temperature range 200-700 K, a dependence of the mobility as T-3 was determined, that can be correlated to the presence of material defects.File in questo prodotto:
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