SAPIENZA, SERGIO
SAPIENZA, SERGIO
Istituto per la Microelettronica e Microsistemi - IMM
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Risultati 1 - 4 di 4 (tempo di esecuzione: 0.013 secondi).
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
2024 Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta
Size-Based Effects of Anthropogenic Ultrafine Particles on Lysosomal TRPML1 Channel and Autophagy in Motoneuron-like Cells
2022 Sapienza, S; Tedeschi, V; Apicella, B; Palestra, F; Russo, C; Piccialli, I; Pannaccione, A; Loffredo, S; Secondo, A.
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
2021 Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC.
2019 Nipoti, Roberta; Canino, Mariaconcetta; Sapienza, Sergio; Bellettato, Michele; Sozzi, Giovanna; Alfieri, Giovanni
Titolo | Data di pubblicazione | Autore(i) | File |
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Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law | 1-gen-2024 | Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta | |
Size-Based Effects of Anthropogenic Ultrafine Particles on Lysosomal TRPML1 Channel and Autophagy in Motoneuron-like Cells | 1-gen-2022 | Sapienza, S; Tedeschi, V; Apicella, B; Palestra, F; Russo, C; Piccialli, I; Pannaccione, A; Loffredo, S; Secondo, A. | |
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup | 1-gen-2021 | Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni | |
Activation energy for the post implantation annealing of 10<sup>19</sup>cm<sup>-3</sup> and 10<sup>20</sup> cm<sup>-3</sup> ion implanted al in 4H SiC. | 1-gen-2019 | Nipoti, Roberta; Canino, Mariaconcetta; Sapienza, Sergio; Bellettato, Michele; Sozzi, Giovanna; Alfieri, Giovanni |