Different praseodymium oxide phases have been obtained by varying oxygen partial pressure during the MOCVD process at 750°C on Si(100). Hexagonal Pr2O3 have been obtained under oxygen deficient conditions, while at oxygen partial pressure higher than 0.7 torr oxidized phases, such as Pr6O11 and/or PrO2, are dominant. Transmission electron microscopy (TEM) and energy filtered transmission electron microscopy (EF-TEM) analyses have been used to characterize structural, compositional and morphological features of praseodymium oxide films.

Structural and compositional investigation of high k praseodymium oxide films deposited by MOCVD

Lo Nigro R;Toro R;Bongiorno C;Raineri V;
2003

Abstract

Different praseodymium oxide phases have been obtained by varying oxygen partial pressure during the MOCVD process at 750°C on Si(100). Hexagonal Pr2O3 have been obtained under oxygen deficient conditions, while at oxygen partial pressure higher than 0.7 torr oxidized phases, such as Pr6O11 and/or PrO2, are dominant. Transmission electron microscopy (TEM) and energy filtered transmission electron microscopy (EF-TEM) analyses have been used to characterize structural, compositional and morphological features of praseodymium oxide films.
2003
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/436679
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