We have recently presented an integrated silicon-glass opto-chemical sensor for lab-on-chip applications, based on porous silicon and anodic bonding technologies. In this work, we have optically characterized the sensor response on exposure to vapors of several organic compounds by means of reflectivity measurements. The interaction between the porous silicon, which acts as transducer layer, and the organic vapors fluxed into the glass sealed microchamber, is preserved by the fabrication process, resulting in optical path increase, due to the capillary condensation of the vapors into the pores. Using the Bruggemann theory, we have calculated the filled pores volume for each substance. The sensor dynamic has been described by time-resolved measurements: due to the analysis chamber miniaturization, the response time is only of 2 s. All these results have been compared with data acquired on the same PSi structure before the anodic bonding process.

A microsystem based on porous silicon-glass anodic bonding for gas and liquid optical sensing

De Stefano L;Della Corte FG;Moretti L;Rea I;Rendina I
2006

Abstract

We have recently presented an integrated silicon-glass opto-chemical sensor for lab-on-chip applications, based on porous silicon and anodic bonding technologies. In this work, we have optically characterized the sensor response on exposure to vapors of several organic compounds by means of reflectivity measurements. The interaction between the porous silicon, which acts as transducer layer, and the organic vapors fluxed into the glass sealed microchamber, is preserved by the fabrication process, resulting in optical path increase, due to the capillary condensation of the vapors into the pores. Using the Bruggemann theory, we have calculated the filled pores volume for each substance. The sensor dynamic has been described by time-resolved measurements: due to the analysis chamber miniaturization, the response time is only of 2 s. All these results have been compared with data acquired on the same PSi structure before the anodic bonding process.
2006
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/438304
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