Interfacial reaction and phase formation as a function of annealing temperature (900, 950 and 1000 degreesC) and times were investigated on titanium thin films evaporated on n-type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford backscattering spectrometry, X-ray diffraction and sheet resistance measurements. At 900 degreesC a double layer of TiC and Ti5Si3 phases was formed and it was found to be stable up to 7 h of annealing. The ternary phase Ti3SiC2 appeared at 950 degreesC with a small fraction, after an annealing for 45 min. At 1000 degreesC there is a strong presence of this phase in conjunction with the Ti5Si3 phase.
Structural characterisation of titanium silicon carbide reaction
La Via F;Raineri V;
2001
Abstract
Interfacial reaction and phase formation as a function of annealing temperature (900, 950 and 1000 degreesC) and times were investigated on titanium thin films evaporated on n-type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford backscattering spectrometry, X-ray diffraction and sheet resistance measurements. At 900 degreesC a double layer of TiC and Ti5Si3 phases was formed and it was found to be stable up to 7 h of annealing. The ternary phase Ti3SiC2 appeared at 950 degreesC with a small fraction, after an annealing for 45 min. At 1000 degreesC there is a strong presence of this phase in conjunction with the Ti5Si3 phase.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
