Redistribution during annealing of low energy B implants in SOI and bulk Si has been investigated by comparing SIMS and simulated profiles. All the samples have been pre amorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. In our experimental conditions the amount of trapped B increases with reducing the depth of the amorphous layer and is higher in bulk Si than in SOI.
Uphill diffusion of ultra low energy boron implants in preamorphised silicon and silicon on insulator
Ferri M;Solmi S;
2007
Abstract
Redistribution during annealing of low energy B implants in SOI and bulk Si has been investigated by comparing SIMS and simulated profiles. All the samples have been pre amorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. In our experimental conditions the amount of trapped B increases with reducing the depth of the amorphous layer and is higher in bulk Si than in SOI.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
