Two miscut directions of (111) Si substrate on 3C-SiC heteroepitaxial growth have been studied with the resulting 3C-SiC stress and defects as a function of miscut axis direction toward [110] and [112] of (111) Si analyzed. We studied this dependency from an experimental point of view, investigating the structural properties of 3C-SiC, and using a kinetic Monte Carlo method on superlattice to confirm our experimental findings with numerical simulations. Residual stress and stacking fault density were halved by growing on a (111) Si substrate off-cut toward the [110] direction. A different surface morphology was revealed between the two inclinations.
Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si
Anzalone R;La Magna A;La Via F
2009
Abstract
Two miscut directions of (111) Si substrate on 3C-SiC heteroepitaxial growth have been studied with the resulting 3C-SiC stress and defects as a function of miscut axis direction toward [110] and [112] of (111) Si analyzed. We studied this dependency from an experimental point of view, investigating the structural properties of 3C-SiC, and using a kinetic Monte Carlo method on superlattice to confirm our experimental findings with numerical simulations. Residual stress and stacking fault density were halved by growing on a (111) Si substrate off-cut toward the [110] direction. A different surface morphology was revealed between the two inclinations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
