Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing

The study aimed to extensively characterize the effects of XeCl multishot laser irradiation on P and Al implanted 4H-SiC epitaxial layers with varying thicknesses of graphitic coating at different energy densities. Results showed that a 180 nm coating at 0.6 J/cm2 provided a smooth surface. The crystalline quality was assessed through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) which disclosed the lack of extended defects and the occurrence of areas with higher concentration of carbon interstitials (C-{i}). Active dopant was assessed through μ-Raman investigation over the Folded Transverse Acoustic (FTA) modes which demonstrated remarkable activation as high as 7 × 1019 cm-3 at 0.6 J/cm2. This investigation enhances our comprehension of laser annealing as post implant activation treatment on 4H-SiC.