3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.

Automatic Image Analysis of Stackingfault

Muoio A.;Calabretta C.;Scuderi V.;Zimbone M.;La Via F.
2022

Abstract

3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.
2022
Istituto per la Microelettronica e Microsistemi - IMM
image segmentation,SiC,stacking fault
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/517727
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