VIVONA, MARILENA
VIVONA, MARILENA
Istituto per la Microelettronica e Microsistemi - IMM
Materials and Processes for Schottky Contacts on Silicon Carbide
2022 Vivona M.; Giannazzo F.; Roccaforte F.
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
2021 Vivona, M. ; Greco, G. ; Bellocchi, G. ; Zumbo, L. ; Di Franco, S. ; Saggio, M. ; Rascuna, S. ; Roccaforte, F.
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
2020 Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
2019 Fiorenza, P. ; Vivona, M. ; Di Franco, S. ; Smecca, E. ; Sanzaro, S. ; Alberti, A. ; Saggio, M. ; Roccaforte, F.
Metal/semiconductor contacts to silicon carbide: Physics and technology
2018 Roccaforte, F; Vivona, M; Greco, G; Lo Nigro, R; Giannazzo, F; Rascuna, S; Saggio, M
Non-destructive characterization of rare-earth-doped optical fiber preforms
2018 Vivona, M; Kim, J; Zervas, Mn
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC
2018 Vivona, M; Greco, G; Bongiorno, C; Di Franco, S; Lo Nigro, R; Scalese, S; Rascuna, S; Saggio, M; Roccaforte, F
Temperature-dependence study of the gate current in SiO2/4H-SiC MOS capacitors
2018 Fiorenza, P; Vivona, M; Iucolano, F; Severino, A; Lorenti, S; Roccaforte, F
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC
2017 Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process
2017 Vivona, M; Fiorenza, P; Iucolano, F; Severino, A; Lorenti, S; Roccaforte, F
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN
2016 Fiorenza, P; Greco, G; Vivona, M; Giannazzo, F; DI FRANCO, Salvatore; Frazzetto, A; Guarnera, A; Saggio, M; Iucolano, F; Patti, A; Roccaforte, F
Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers
2016 Vivona, M; Fiorenza, P; Sledziewski, T; Krieger, M; Chassagne, T; Zielinski, M; Roccaforte, F
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
2016 Fiorenza, P; La Magna, A; Vivona, M; Roccaforte, F
Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers
2016 Vivona, M; Fiorenza, P; Sledziewski, T; Gkanatsiou, A; Krieger, M; Chassagne, T; Zielinski, M; Roccaforte, F
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN
2016 Roccaforte, F; Vivona, M; Greco, G; LO NIGRO, Raffaella; Giannazzo, F; DI FRANCO, Salvatore; Bongiorno, C; Iucolano, F; Frazzetto, A; Rascunà, S; Patti, A; Msaggio,
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions
2016 Vivona, M; Fiorenza, P; DI FRANCO, Salvatore; Marcandella, C; Gaillardin, M; Girard, S; Roccaforte, F
Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate
2015 Alassaad, K; Souliere, V; Vivona, M; Giannazzo, F; Roccaforte, F; Ferro, G
Preliminary study on the effect of micrometric Ge-droplets on the characteristics of Ni/4H-SiC Schottky contacts
2015 Vivona, M; Giannazzo, F; Alassaad, K; Souliere, V; Ferro, G; Roccaforte, F
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3
2015 Fiorenza, P; Vivona, M; Swanson, Lk; Giannazzo, F; Bongiorno, C; DI FRANCO, Salvatore; Lorenti, S; Frazzetto, A; Chassagne, T; Roccaforte, F
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
2015 Vivona, M; Greco, G; Lo Nigro, R; Bongiorno, C; Roccaforte, F
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Materials and Processes for Schottky Contacts on Silicon Carbide | 1-gen-2022 | Vivona M.; Giannazzo F.; Roccaforte F. | |
| Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC | 1-gen-2021 | Vivona, M. ; Greco, G. ; Bellocchi, G. ; Zumbo, L. ; Di Franco, S. ; Saggio, M. ; Rascuna, S. ; Roccaforte, F. | |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide | 1-gen-2020 | Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering | 1-gen-2019 | Fiorenza, P. ; Vivona, M. ; Di Franco, S. ; Smecca, E. ; Sanzaro, S. ; Alberti, A. ; Saggio, M. ; Roccaforte, F. | |
| Metal/semiconductor contacts to silicon carbide: Physics and technology | 1-gen-2018 | Roccaforte, F; Vivona, M; Greco, G; Lo Nigro, R; Giannazzo, F; Rascuna, S; Saggio, M | |
| Non-destructive characterization of rare-earth-doped optical fiber preforms | 1-gen-2018 | Vivona, M; Kim, J; Zervas, Mn | |
| Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC | 1-gen-2018 | Vivona, M; Greco, G; Bongiorno, C; Di Franco, S; Lo Nigro, R; Scalese, S; Rascuna, S; Saggio, M; Roccaforte, F | |
| Temperature-dependence study of the gate current in SiO2/4H-SiC MOS capacitors | 1-gen-2018 | Fiorenza, P; Vivona, M; Iucolano, F; Severino, A; Lorenti, S; Roccaforte, F | |
| Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC | 1-gen-2017 | Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F. | |
| Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process | 1-gen-2017 | Vivona, M; Fiorenza, P; Iucolano, F; Severino, A; Lorenti, S; Roccaforte, F | |
| Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN | 1-gen-2016 | Fiorenza, P; Greco, G; Vivona, M; Giannazzo, F; DI FRANCO, Salvatore; Frazzetto, A; Guarnera, A; Saggio, M; Iucolano, F; Patti, A; Roccaforte, F | |
| Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers | 1-gen-2016 | Vivona, M; Fiorenza, P; Sledziewski, T; Krieger, M; Chassagne, T; Zielinski, M; Roccaforte, F | |
| Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements | 1-gen-2016 | Fiorenza, P; La Magna, A; Vivona, M; Roccaforte, F | |
| Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers | 1-gen-2016 | Vivona, M; Fiorenza, P; Sledziewski, T; Gkanatsiou, A; Krieger, M; Chassagne, T; Zielinski, M; Roccaforte, F | |
| Study of Ti/Al-based Metal Contacts to p-type SiC and GaN | 1-gen-2016 | Roccaforte, F; Vivona, M; Greco, G; LO NIGRO, Raffaella; Giannazzo, F; DI FRANCO, Salvatore; Bongiorno, C; Iucolano, F; Frazzetto, A; Rascunà, S; Patti, A; Msaggio, | |
| X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions | 1-gen-2016 | Vivona, M; Fiorenza, P; DI FRANCO, Salvatore; Marcandella, C; Gaillardin, M; Girard, S; Roccaforte, F | |
| Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate | 1-gen-2015 | Alassaad, K; Souliere, V; Vivona, M; Giannazzo, F; Roccaforte, F; Ferro, G | |
| Preliminary study on the effect of micrometric Ge-droplets on the characteristics of Ni/4H-SiC Schottky contacts | 1-gen-2015 | Vivona, M; Giannazzo, F; Alassaad, K; Souliere, V; Ferro, G; Roccaforte, F | |
| Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 | 1-gen-2015 | Fiorenza, P; Vivona, M; Swanson, Lk; Giannazzo, F; Bongiorno, C; DI FRANCO, Salvatore; Lorenti, S; Frazzetto, A; Chassagne, T; Roccaforte, F | |
| Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC | 1-gen-2015 | Vivona, M; Greco, G; Lo Nigro, R; Bongiorno, C; Roccaforte, F |