InAs quantum dots prepared by molecular beam epitaxy were studied. The structures were designed so that the strain of quantum dots could be controlled. It was found that strain could be used to tune the emission energy of quantum dots. It is believed that it will be possible to extend emission wavelength beyond 1.55 ?m.
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures
Seravalli L;Frigeri P;Avanzini V;Franchi S
2003
Abstract
InAs quantum dots prepared by molecular beam epitaxy were studied. The structures were designed so that the strain of quantum dots could be controlled. It was found that strain could be used to tune the emission energy of quantum dots. It is believed that it will be possible to extend emission wavelength beyond 1.55 ?m.File in questo prodotto:
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