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Correlation between current transport and defects in n+/p 6H-SiC diodes

Moscatelli F;Nipoti R;Poggi A
2005
2005
Istituto per la Microelettronica e Microsistemi - IMM
ICSCRM 2005
Pittsburgh (Pennsylvania, USA)
wide band gap semiconductors
6H-SiC
ion implanted diodes
defects
This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.
none
info:eu-repo/semantics/conferenceObject
Canino M; Castaldini A; Cavallini A; Moscatelli F; Nipoti R; Poggi A
275
04 Contributo in convegno::04.03 Poster in Atti di convegno
3
04.03 Poster in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/86692
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