CNR Institutional Research Information System

Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient

Poggi A;Moscatelli F;Scorzoni A;Nipoti R;Sanmartin M
2005
2005
Istituto per la Microelettronica e Microsistemi - IMM
ICSCRM 2005
Pittsburgh (Pennsylvania, USA)
wide band gap semiconductors
4H-SiC
n-type MOS
oxynitridation
interface state density
Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.
none
info:eu-repo/semantics/conferenceObject
Poggi A; Moscatelli F; Scorzoni A; Marino G; Nipoti R; Sanmartin M
275
04 Contributo in convegno::04.03 Poster in Atti di convegno
5
04.03 Poster in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/86700
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact