We present an analysis of the phase stabilization of β-Ga2O3and κ-Ga2O3grown by metal–organic vapor-phase epitaxy with varying supersaturation of the gas-phase precursors on c-sapphire and GaN substrates. We compare in-depth structural analyses of the bulk and interface layers, also through the measurement of strain relaxation across the structure, with a comprehensive nucleation model, based on multiscale simulations. A coherent and quantitative interpretation of different stages of the nucleation of Ga2O3phases on sapphire is elaborated on, highlighting the crucial role of the supersaturation of gas precursors and of the residual misfit strain within the initial layers in the stabilization of competing Ga2O3polymorphs.
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3on Al2O3(0001) and GaN (0001) Substrates
Seravalli L.
;Bosi M.;Mezzadri F.;Nasi L.;Fornari R.
2025
Abstract
We present an analysis of the phase stabilization of β-Ga2O3and κ-Ga2O3grown by metal–organic vapor-phase epitaxy with varying supersaturation of the gas-phase precursors on c-sapphire and GaN substrates. We compare in-depth structural analyses of the bulk and interface layers, also through the measurement of strain relaxation across the structure, with a comprehensive nucleation model, based on multiscale simulations. A coherent and quantitative interpretation of different stages of the nucleation of Ga2O3phases on sapphire is elaborated on, highlighting the crucial role of the supersaturation of gas precursors and of the residual misfit strain within the initial layers in the stabilization of competing Ga2O3polymorphs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
