: Atomically thin molybdenum disulfide (MoS2) is a two-dimensional semiconductor with versatile applications. The recent adoption of liquid molybdenum precursors in chemical vapor deposition has contributed significantly to the reproducible wafer-scale synthesis of MoS2 monolayer and few-layer films. In this work, we study the effects of the carrier gas flow rate on the properties of two-dimensional molybdenum disulfide grown by liquid-precursor-intermediate chemical vapor deposition on SiO2/Si substrates. We characterized the samples using Optical Microscopy, Scanning Electron Microscopy, Raman spectroscopy, and Photoluminescence spectroscopy. We analyzed samples grown with different nitrogen carrier flows, ranging from 150 to 300 sccm, and discussed the effect of carrier gas flows on their properties. We found a correlation between MoS2 flake lateral size, shape, and number of layers, and we present a qualitative growth model based on changes in sulfur provision caused by different carrier flows. We show how the use of liquid precursors can allow for the synthesis of homogeneous, single-layer flakes up to 100 µm in lateral size by optimizing the gas flow rate. These results are essential for gaining a deeper understanding of the growth process of MoS2.

Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors

Esposito, Fiorenza;Bosi, Matteo;Attolini, Giovanni;Rossi, Francesca;Fornari, Roberto;Fabbri, Filippo
;
Seravalli, Luca
2024

Abstract

: Atomically thin molybdenum disulfide (MoS2) is a two-dimensional semiconductor with versatile applications. The recent adoption of liquid molybdenum precursors in chemical vapor deposition has contributed significantly to the reproducible wafer-scale synthesis of MoS2 monolayer and few-layer films. In this work, we study the effects of the carrier gas flow rate on the properties of two-dimensional molybdenum disulfide grown by liquid-precursor-intermediate chemical vapor deposition on SiO2/Si substrates. We characterized the samples using Optical Microscopy, Scanning Electron Microscopy, Raman spectroscopy, and Photoluminescence spectroscopy. We analyzed samples grown with different nitrogen carrier flows, ranging from 150 to 300 sccm, and discussed the effect of carrier gas flows on their properties. We found a correlation between MoS2 flake lateral size, shape, and number of layers, and we present a qualitative growth model based on changes in sulfur provision caused by different carrier flows. We show how the use of liquid precursors can allow for the synthesis of homogeneous, single-layer flakes up to 100 µm in lateral size by optimizing the gas flow rate. These results are essential for gaining a deeper understanding of the growth process of MoS2.
2024
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Istituto Nanoscienze - NANO
photoluminescence spectroscopy
Raman spectroscopy
carrier gas
chemical vapor deposition
liquid molybdenum precursors
molybdenum disulfide
File in questo prodotto:
File Dimensione Formato  
Fiorenza flusso_Nanomater 2024.pdf

accesso aperto

Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 2.96 MB
Formato Adobe PDF
2.96 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/514063
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact