FORNARI, ROBERTO
FORNARI, ROBERTO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
2024 Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R,
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
2023 Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ?-Ga2O3 epilayers
2022 Parisini A.; Bosio A.; von Bardeleben H.J.; Jimenez J.; Dadgostar S.; Pavesi M.; Baraldi A.; Vantaggio S.; Fornari R.
Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films
2021 Montedoro, V; Torres, A; Dadgostar, S; Jimenez, J; Bosi, M; Parisini, A; Fornari, R
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion
2021 Bosio, A; Parisini, A; Lamperti, A; Borelli, C; Fornasini, L; Bosi, M; Cora, I; Fogarassy, Z; Pecs, B; Zolnai, Z; Nemeth, A; Vantaggio, S; Fornari, R
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy
2021 Bosi M.; Seravalli L.; Mazzolini P.; Mezzadri F.; Fornari R.
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors
2020 Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher
Ga(2)O(3)polymorphs: tailoring the epitaxial growth conditions
2020 Bosi, M; Mazzolini, P; Seravalli, L; Fornari, R
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3
2020 Cora I.; Fogarassy, Z.; Fornari, R.; Bosi, M.; Recnik, A.; Pécz, B.
Gallium Oxide: A Rising Star in the Semiconductor Realm
2019 Bosi, Matteo; Fornari, Roberto
Si and Sn doping of epsilon-Ga2O3 layers
2019 Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R.
The electronic structure of epsilon-Ga2O3
2019 Mulazzi, M; Reichmann, F; Becker, A; Klesse, W M; Alippi, P; Fiorentini, V; Fiorentini, V; Parisini, A; Bosi, M; Fornari, R
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors
2018 Pavesi, M; Fabbri, F; Boschi, F; Piacentini, G; Baraldi, A; Bosi, M; Gombia, E; Parisini, A; Fornari, R
Sol-gel growth and characterization of In2O3 thin films
2018 PalomaresSanchez Salvador, A; Watts Bernard, E; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts
2017 Cavallari N.; Pattini F.; Rampino S.; Annoni F.; Barozzi M.; Bronzoni M.; Gilioli E.; Gombia E.; Maragliano C.; Mazzer M.; Pepponi G.; Spaggiari G.; Fornari R.
The real structure of Ga2O3 and its relation to epsilon-phase
2017 Cora I.; Mezzadri F.; Boschi F.; Bosi M.; Kaploviková M.; Calestani G.; Dódony I.; Pécz B.; Fornari R.
Thermal stability of epsilon-Ga2O3 polymorph
2017 Fornari, R; Pavesi, M; Montedoro, V; Klimm, D; Mezzadri, F; Cora, I; Pecz, B; Boschi, F; Parisini, A; Baraldi, A; Ferrari, C; Gombia, E; Bosi, M
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire
2016 Mezzadri F.; Calestani G.; Boschi F.; Delmonte D.; Bosi M.; Fornari R.
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD
2016 Boschi F.; Bosi M.; Berzina T.; Buffagni E.; Ferrari C.; Fornari R.
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy
2004 Bosi, M; Fornari, R; Scardova, S; Avella, M; Martinez, O; Jimenez, J
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates | 1-gen-2024 | Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R, | |
| Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors | 1-gen-2023 | Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto | |
| Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ?-Ga2O3 epilayers | 1-gen-2022 | Parisini A.; Bosio A.; von Bardeleben H.J.; Jimenez J.; Dadgostar S.; Pavesi M.; Baraldi A.; Vantaggio S.; Fornari R. | |
| Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films | 1-gen-2021 | Montedoro, V; Torres, A; Dadgostar, S; Jimenez, J; Bosi, M; Parisini, A; Fornari, R | |
| n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion | 1-gen-2021 | Bosio, A; Parisini, A; Lamperti, A; Borelli, C; Fornasini, L; Bosi, M; Cora, I; Fogarassy, Z; Pecs, B; Zolnai, Z; Nemeth, A; Vantaggio, S; Fornari, R | |
| Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy | 1-gen-2021 | Bosi M.; Seravalli L.; Mazzolini P.; Mezzadri F.; Fornari R. | |
| Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors | 1-gen-2020 | Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher | |
| Ga(2)O(3)polymorphs: tailoring the epitaxial growth conditions | 1-gen-2020 | Bosi, M; Mazzolini, P; Seravalli, L; Fornari, R | |
| In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 | 1-gen-2020 | Cora I.; Fogarassy, Z.; Fornari, R.; Bosi, M.; Recnik, A.; Pécz, B. | |
| Gallium Oxide: A Rising Star in the Semiconductor Realm | 1-gen-2019 | Bosi, Matteo; Fornari, Roberto | |
| Si and Sn doping of epsilon-Ga2O3 layers | 1-gen-2019 | Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R. | |
| The electronic structure of epsilon-Ga2O3 | 1-gen-2019 | Mulazzi, M; Reichmann, F; Becker, A; Klesse, W M; Alippi, P; Fiorentini, V; Fiorentini, V; Parisini, A; Bosi, M; Fornari, R | |
| epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors | 1-gen-2018 | Pavesi, M; Fabbri, F; Boschi, F; Piacentini, G; Baraldi, A; Bosi, M; Gombia, E; Parisini, A; Fornari, R | |
| Sol-gel growth and characterization of In2O3 thin films | 1-gen-2018 | PalomaresSanchez Salvador, A; Watts Bernard, E; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto | |
| Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts | 1-gen-2017 | Cavallari N.; Pattini F.; Rampino S.; Annoni F.; Barozzi M.; Bronzoni M.; Gilioli E.; Gombia E.; Maragliano C.; Mazzer M.; Pepponi G.; Spaggiari G.; Fornari R. | |
| The real structure of Ga2O3 and its relation to epsilon-phase | 1-gen-2017 | Cora I.; Mezzadri F.; Boschi F.; Bosi M.; Kaploviková M.; Calestani G.; Dódony I.; Pécz B.; Fornari R. | |
| Thermal stability of epsilon-Ga2O3 polymorph | 1-gen-2017 | Fornari, R; Pavesi, M; Montedoro, V; Klimm, D; Mezzadri, F; Cora, I; Pecz, B; Boschi, F; Parisini, A; Baraldi, A; Ferrari, C; Gombia, E; Bosi, M | |
| Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire | 1-gen-2016 | Mezzadri F.; Calestani G.; Boschi F.; Delmonte D.; Bosi M.; Fornari R. | |
| Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD | 1-gen-2016 | Boschi F.; Bosi M.; Berzina T.; Buffagni E.; Ferrari C.; Fornari R. | |
| Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy | 1-gen-2004 | Bosi, M; Fornari, R; Scardova, S; Avella, M; Martinez, O; Jimenez, J |