Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)
Matteo Bosi;Luca Seravalli;Roberto Fornari
2023
Abstract
Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.File | Dimensione | Formato | |
---|---|---|---|
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation).docx
solo utenti autorizzati
Descrizione: Abstract
Tipologia:
Documento in Pre-print
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
30.79 kB
Formato
Microsoft Word XML
|
30.79 kB | Microsoft Word XML | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.