Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.

Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)

Matteo Bosi;Luca Seravalli;Roberto Fornari
2023

Abstract

Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.
2023
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
9781510659490
gallium oxide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/510505
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