SnO/ ϵ-Ga2O3 vertical p-n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current-voltage measurements. The effects of the in-plane conduction through the Si-doped ϵ-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ϵ-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.
Study of SnO/-Ga2O3p - N diodes in planar geometry
Bosi M.;Seravalli L.;Fornari R.
2022
Abstract
SnO/ ϵ-Ga2O3 vertical p-n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current-voltage measurements. The effects of the in-plane conduction through the Si-doped ϵ-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ϵ-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.File | Dimensione | Formato | |
---|---|---|---|
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry.pdf
solo utenti autorizzati
Descrizione: Articolo
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
2.1 MB
Formato
Adobe PDF
|
2.1 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.