SnO/ ϵ-Ga2O3 vertical p-n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current-voltage measurements. The effects of the in-plane conduction through the Si-doped ϵ-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ϵ-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.

Study of SnO/-Ga2O3p - N diodes in planar geometry

Bosi M.;Seravalli L.;Fornari R.
2022

Abstract

SnO/ ϵ-Ga2O3 vertical p-n diodes with planar geometry have been fabricated on c-plane Al2O3 and investigated by current-voltage measurements. The effects of the in-plane conduction through the Si-doped ϵ-Ga2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ϵ-Ga2O3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.
2022
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/510593
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