LOMBARDO, SALVATORE ANTONINO
LOMBARDO, SALVATORE ANTONINO
Istituto per la Microelettronica e Microsistemi - IMM
A new generation of SPAD - Single-photon avalanche diodes
2008 Tudisco, S; Musumeci, F; Lanzano, L; Scordino, A; Privitera, S; Campisi, A; Cosentino, L; Condorelli, G; Finocchiaro, P; Fallica, G; Lombardo, S; Mazzillo, M; Sanfilippo, D; Sciacca, E
A new generation of SPAD: single photon avalanche diodes
2008 Tudisco S; Privitera S; Musumeci F; Lanzano' L; Scordino A; Campisi A; Cosentino L; Finocchiaro P; Fallica G; Lombardo S; Mazzillo M; Sanfilippo D; Sciacca E; Valvo G
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
2008 Pagano R; Lombardo S; Palumbo F; Kirsch P; Krishnan SA; Young C; Choi R; Bersuker G; Stathis JH
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics
2020 Palumbo, Felix; Wen, Chao; Lombardo, Salvatore; Pazos, Sebastian; Aguirre, Fernando; Eizenberg, Moshe; Hui, Fei; Lanza, Mario
A single photon avalanche detector: SPAD
2007 Tudisco S; Privitera S; Musumeci F; Lanzano' L; Scordino A; Campisi A; Cosentino L; Condorelli G; Finocchiaro P; Lombardo S; Mazzillo M; Sciacca E
Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model
2005 Palumbo, F; Miranda, E; Lombardo, S
Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices
2007 Lombardo, S; Gerardi, C; Breuil, L; Jahan, C; Perniola, L; Cina, G; Corso, D; Tripiciano, E; Ancarani, V; Iannaccone, G; Iacono, G; Bongiorno, C; Garozzo, C; Barbera, P; Nowak, E; Puglisi, R; Costa, G; Coccorese, C; Vecchio, M; Rimini, E; Van Houdt, J; De Salvo, B; Melanotte, M
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting
2016 Han, Tingting; Shi, Yuanyuan; Song, Xiaoxue; Mio, Antonio; Valenti, Luca; Hui, Fei; Privitera, Stefania; Lombardo, Salvatore; Lanza, Mario
Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations
2009 La Fata, P; Torrisi, F; Lombardo, S; Nicotra, G; Puglisi, R; Rimini, E
AMORPHOUS TO POLYCRYSTAL TRANSITION IN ION IRRADIATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON
1989 SPINELLA C; LOMBARDO S; CAMPISANO SU
Amorphous-fcc transition in Ge2Sb2Te5
2010 Lombardo S; Rimini E; Grimaldi MG; Privitera S
Applicability of a new sulfonated pentablock copolymer membrane and modified gas diffusion layers for low-cost water splitting processes
2019 Filice, S; Urzi, G; Milazzo, Rg; Privitera, Sms; Lombardo, Sa; Compagnini, G; Scalese, S
Arrays of Geiger mode avalanche photodiodes
2006 Sciacca E; Lombardo S; Mazzillo M; Condorelli G; Sanfilippo D; Contissa A; Belluso M; Torrisi F; Billotta S; Campisi A; Cosentino L; Piazza A; Fallica G; Finocchiaro P; Musumeci F; Privitera S; Tudisco S; Bonanno G; Rimini E
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
1996 Raineri, V; Lombardo, S; Iacona, F; La Via, F
Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si
1998 Lombardo, Sa; Privitera, V; Pinto, A; Ward, P; La Rosa, G; Campisano, Su
Breakdown kinetics of Pr2O3 films by conductive-atomic force microscopy
2005 Fiorenza P.; Lo Nigro R.; Raineri V.; Lombardo S.; Toro R.G.; Malandrino G.; Fragala I.L.
Breakdown transients in ultrathin gate oxides: transition in the degradation rate
2003 Lombardo, S; Stathis, Jh; Linder, Bp
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011 Cannella, G; Principato, F; Foti, M; Di Marco, S; Grasso, A; Lombardo, S
Characterization of a fiber-less, multichannel optical probe for continuous wave functional near-infrared spectroscopy based on silicon photomultipliers detectors: in-vivo assessment of primary sensorimotor response
2017 Chiarelli Antonio, M; Libertino, Sebania; Zappasodi, Filippo; Mazzillo, Massimo; Di Pompeo, Francesco; Merla, Arcangelo; Lombardo, SALVATORE ANTONINO; Fallica, Giorgio
Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si
1996 Lombardo S.; Kyllesbech Larsen K.; Raineri V.; La Via F.; Campisano S.U.; Lagomarsino S.; Kazimirov A.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A new generation of SPAD - Single-photon avalanche diodes | 1-gen-2008 | Tudisco, S; Musumeci, F; Lanzano, L; Scordino, A; Privitera, S; Campisi, A; Cosentino, L; Condorelli, G; Finocchiaro, P; Fallica, G; Lombardo, S; Mazzillo, M; Sanfilippo, D; Sciacca, E | |
A new generation of SPAD: single photon avalanche diodes | 1-gen-2008 | Tudisco S; Privitera S; Musumeci F; Lanzano' L; Scordino A; Campisi A; Cosentino L; Finocchiaro P; Fallica G; Lombardo S; Mazzillo M; Sanfilippo D; Sciacca E; Valvo G | |
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks | 1-gen-2008 | Pagano R; Lombardo S; Palumbo F; Kirsch P; Krishnan SA; Young C; Choi R; Bersuker G; Stathis JH | |
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics | 1-gen-2020 | Palumbo, Felix; Wen, Chao; Lombardo, Salvatore; Pazos, Sebastian; Aguirre, Fernando; Eizenberg, Moshe; Hui, Fei; Lanza, Mario | |
A single photon avalanche detector: SPAD | 1-gen-2007 | Tudisco S; Privitera S; Musumeci F; Lanzano' L; Scordino A; Campisi A; Cosentino L; Condorelli G; Finocchiaro P; Lombardo S; Mazzillo M; Sciacca E | |
Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model | 1-gen-2005 | Palumbo, F; Miranda, E; Lombardo, S | |
Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices | 1-gen-2007 | Lombardo, S; Gerardi, C; Breuil, L; Jahan, C; Perniola, L; Cina, G; Corso, D; Tripiciano, E; Ancarani, V; Iannaccone, G; Iacono, G; Bongiorno, C; Garozzo, C; Barbera, P; Nowak, E; Puglisi, R; Costa, G; Coccorese, C; Vecchio, M; Rimini, E; Van Houdt, J; De Salvo, B; Melanotte, M | |
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting | 1-gen-2016 | Han, Tingting; Shi, Yuanyuan; Song, Xiaoxue; Mio, Antonio; Valenti, Luca; Hui, Fei; Privitera, Stefania; Lombardo, Salvatore; Lanza, Mario | |
Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations | 1-gen-2009 | La Fata, P; Torrisi, F; Lombardo, S; Nicotra, G; Puglisi, R; Rimini, E | |
AMORPHOUS TO POLYCRYSTAL TRANSITION IN ION IRRADIATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON | 1-gen-1989 | SPINELLA C; LOMBARDO S; CAMPISANO SU | |
Amorphous-fcc transition in Ge2Sb2Te5 | 1-gen-2010 | Lombardo S; Rimini E; Grimaldi MG; Privitera S | |
Applicability of a new sulfonated pentablock copolymer membrane and modified gas diffusion layers for low-cost water splitting processes | 1-gen-2019 | Filice, S; Urzi, G; Milazzo, Rg; Privitera, Sms; Lombardo, Sa; Compagnini, G; Scalese, S | |
Arrays of Geiger mode avalanche photodiodes | 1-gen-2006 | Sciacca E; Lombardo S; Mazzillo M; Condorelli G; Sanfilippo D; Contissa A; Belluso M; Torrisi F; Billotta S; Campisi A; Cosentino L; Piazza A; Fallica G; Finocchiaro P; Musumeci F; Privitera S; Tudisco S; Bonanno G; Rimini E | |
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon | 1-gen-1996 | Raineri, V; Lombardo, S; Iacona, F; La Via, F | |
Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si | 1-gen-1998 | Lombardo, Sa; Privitera, V; Pinto, A; Ward, P; La Rosa, G; Campisano, Su | |
Breakdown kinetics of Pr2O3 films by conductive-atomic force microscopy | 1-gen-2005 | Fiorenza P.; Lo Nigro R.; Raineri V.; Lombardo S.; Toro R.G.; Malandrino G.; Fragala I.L. | |
Breakdown transients in ultrathin gate oxides: transition in the degradation rate | 1-gen-2003 | Lombardo, S; Stathis, Jh; Linder, Bp | |
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction | 1-gen-2011 | Cannella, G; Principato, F; Foti, M; Di Marco, S; Grasso, A; Lombardo, S | |
Characterization of a fiber-less, multichannel optical probe for continuous wave functional near-infrared spectroscopy based on silicon photomultipliers detectors: in-vivo assessment of primary sensorimotor response | 1-gen-2017 | Chiarelli Antonio, M; Libertino, Sebania; Zappasodi, Filippo; Mazzillo, Massimo; Di Pompeo, Francesco; Merla, Arcangelo; Lombardo, SALVATORE ANTONINO; Fallica, Giorgio | |
Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si | 1-gen-1996 | Lombardo S.; Kyllesbech Larsen K.; Raineri V.; La Via F.; Campisano S.U.; Lagomarsino S.; Kazimirov A. |