CNR Institutional Research Information System

ITALIA, MARKUS
 Distribuzione geografica
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Continente #
AS - Asia 816
NA - Nord America 425
SA - Sud America 145
EU - Europa 121
AF - Africa 21
OC - Oceania 2
Totale 1.530
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Nazione #
US - Stati Uniti d'America 406
SG - Singapore 365
CN - Cina 219
BR - Brasile 122
HK - Hong Kong 84
VN - Vietnam 50
FR - Francia 43
KR - Corea 27
NL - Olanda 16
IN - India 14
IT - Italia 12
BD - Bangladesh 11
JP - Giappone 10
DE - Germania 9
FI - Finlandia 9
MX - Messico 9
AR - Argentina 8
ES - Italia 6
GB - Regno Unito 6
MA - Marocco 6
AT - Austria 5
ID - Indonesia 5
IL - Israele 5
IQ - Iraq 5
CA - Canada 4
PK - Pakistan 4
UZ - Uzbekistan 4
ZA - Sudafrica 4
CL - Cile 3
EC - Ecuador 3
NP - Nepal 3
SE - Svezia 3
UA - Ucraina 3
UY - Uruguay 3
AU - Australia 2
DZ - Algeria 2
ET - Etiopia 2
JM - Giamaica 2
JO - Giordania 2
KE - Kenya 2
KW - Kuwait 2
PE - Perù 2
PH - Filippine 2
RS - Serbia 2
RU - Federazione Russa 2
VE - Venezuela 2
BG - Bulgaria 1
BM - Bermuda 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CO - Colombia 1
EG - Egitto 1
GR - Grecia 1
HN - Honduras 1
LT - Lituania 1
ML - Mali 1
MM - Myanmar 1
MY - Malesia 1
NI - Nicaragua 1
OM - Oman 1
PL - Polonia 1
PR - Porto Rico 1
PY - Paraguay 1
SA - Arabia Saudita 1
SN - Senegal 1
TN - Tunisia 1
Totale 1.530
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Città #
Singapore 214
Santa Clara 178
Hong Kong 83
Hefei 60
Beijing 56
San Jose 40
Lauterbourg 37
Ashburn 35
Seoul 26
Los Angeles 19
Ho Chi Minh City 18
Guangzhou 12
São Paulo 12
New York 8
Hanoi 7
Dhaka 6
Orem 6
Curitiba 5
Tokyo 5
Turku 5
Bengaluru 4
Brooklyn 4
Buffalo 4
Helsinki 4
Minamishinagawa 4
Rio de Janeiro 4
Vienna 4
Belo Horizonte 3
Chennai 3
Frankfurt am Main 3
Guarulhos 3
Haiphong 3
Kathmandu 3
Las Vegas 3
Stockholm 3
Addis Ababa 2
Amman 2
Bari 2
Belgrade 2
Biên Hòa 2
Boston 2
Brasília 2
Campo Grande 2
Cape Town 2
City of London 2
Dallas 2
Fortaleza 2
Fresno 2
Houston 2
Jakarta 2
Jequié 2
Johannesburg 2
Joinville 2
Kingston 2
Kuwait City 2
Manchester 2
Montevideo 2
Munich 2
Ninh Bình 2
Osasco 2
Paris 2
Porto Alegre 2
Rome 2
San Francisco 2
Santo André 2
Shanghai 2
Sumaré 2
Summerville 2
Tashkent 2
Telluride 2
Washington 2
Abidjan 1
Agadir 1
Almirante Tamandaré 1
Amarillo 1
Amritsar 1
Amsterdam 1
An Giang Province 1
Anápolis 1
Apopka 1
Araçatuba 1
Arujá 1
Athens 1
Atibaia 1
Atlanta 1
Augusta 1
Aurora 1
Avaré 1
Bacolod City 1
Bad Hersfeld 1
Baghdad 1
Bahawalpur 1
Bamako 1
Bambuí 1
Barcarena 1
Barcelona 1
Bayamón 1
Betim 1
Blumenau 1
Bragança 1
Totale 985
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Nome #
Strong Raman yield enhancement in large Si nanocrystals from ultraviolet to infrared: Density and shape dependence 70
Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation 70
Excimer Laser Annealing of Ion-implanted Silicon: Dopant Activation, Diffusion and Defect Formation 57
Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics 53
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates 49
BORON DISTRIBUTION IN SILICON AFTER EXCIMER LASER ANNEALING WITH MULTIPLE PULSES 48
A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method 48
Radial junctions formed by conformal chemical doping for innovative hole-based solar cells 48
Solid phase phosphorous activation in implanted silicon by excimer laser irradiation 44
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches 43
Heterogeneous growth of continuous ZIF-8 films on low-temperature amorphous silicon 41
Molecular Doping applied to Si Nanowires array based Solar Cells 41
Array of nanofibrous polyaniline-based sensors with different chemo-structural assembling 40
Bow in 6 inch high-quality off-axis (111) 3C-SiC films 40
Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties 39
Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis 39
The site of Indium in Indium + Carbon doped Silicon 38
Strong infrared photoluminescence in highly porous layers of large faceted Si crystalline nanoparticles 38
N-type doping of Ge by As implantation and excimer laser annealing 38
Towards Large Area (111)3C-SiC Films Grown on off-oriented (111)Si 37
Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching 36
Nanofabrication processes for innovative nanohole-based solar cells 35
Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: Atwo-dimensional analysis 35
Electrospun polymer nanofibres towards diagnostic devices 35
Investigation of the indium-boron interaction in silicon 34
Boron distribution in silicon after multiple pulse excimer laser annealing 32
Experimental determination of the local geometry around In and In-C complexes in Si 31
Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes 31
Experimental determination of the local geometry around of In atoms and In-C complexes in Si 29
Excimer laser annealing of B and BF2 implanted Si 28
Boron distribution in silicon after excimer laser annealing with multiple pulses 26
The effect of thermal treatments on the local geometry around indium in In and In+C high dose implanted Si 26
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon 23
Experimental determination of the local geometry around of In atoms and In-C complexes in Si 23
Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing 23
Dopant behaviour and damage annealing in silicon implanted with 1 kev arsenic 22
EXCIMER LASER ANNEALING OF B AND BF2 IMPLANTED Si 22
Electrical activation phenomena induced by excimer laser annealing in B-implanted silicon 22
Role of C and Ge in the electrical activation of In implanted in Silicon. 22
Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers 20
Diffusion and electrical activation of indium in silicon 19
Electrical activation of ultralow energy As implants in Si 19
Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing. 16
Totale 1.530
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Categoria #
all - tutte 5.882
article - articoli 4.825
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.707
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202415 0 0 0 0 0 0 0 0 1 0 14 0
2024/2025605 0 2 66 18 170 4 1 28 6 17 156 137
2025/2026886 37 80 64 157 201 36 131 49 44 52 23 12
2026/202724 24 0 0 0 0 0 0 0 0 0 0 0
Totale 1.530