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GIANNAZZO, FILIPPO

GIANNAZZO, FILIPPO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 407 (tempo di esecuzione: 0.03 secondi).
Titolo Data di pubblicazione Autore(i) File
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 1-gen-2025 Milazzo, Simone; Greco, Giuseppe; Di Franco, Salvatore; Fiorenza, Patrick; Giannazzo, Filippo; Bongiorno, Corrado; Gervasi, Leonardo; Mirabella, Salvatore; Iucolano, Ferdinando; Roccaforte, Fabrizio
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 1-gen-2024 Vivona, M.; Fiorenza, P.; Scuderi, V.; La Via, F.; Giannazzo, F.; Roccaforte, F.
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 1-gen-2024 Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F.
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 1-gen-2024 Fiorenza, Patrick; Zignale, Marco; Zanetti, Edoardo; Alessandrino, Mario S.; Carbone, Beatrice; Guarnera, Alfio; Saggio, Mario; Giannazzo, Filippo; Roccaforte, Fabrizio
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 1-gen-2024 Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 1-gen-2024 Fiorenza, Patrick; Zignale, Marco; Camalleri, Marco; Scalia, Laura; Zanetti, Edoardo; Saggio, Mario; Giannazzo, Filippo; Roccaforte, Fabrizio
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 1-gen-2024 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Koos, A.; Pecz, B.
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 1-gen-2024 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F.
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 1-gen-2024 Roccaforte, Fabrizio; Vivona, Marilena; Panasci, Salvatore Ethan; Greco, Giuseppe; Fiorenza, Patrick; Sulyok, Attila; Koos, Antal; Pecz, Bela; Giannazzo, Filippo
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 1-gen-2024 Galizia, Bruno; Fiorenza, Patrick; Bongiorno, Corrado; Pécz, Béla; Fogarassy, Zsolt; Schiliro', Emanuela; Giannazzo, Filippo; Roccaforte, Fabrizio; LO NIGRO, Raffaella
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 1-gen-2024 Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F.
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 1-gen-2024 Greco, G.; Fiorenza, P.; Giannazzo, F.; Vivona, M.; Venuto, C.; Iucolano, F.; Roccaforte, F.
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 1-gen-2024 Panasci, Salvatore Ethan; Schiliro, Emanuela; Cannas, Marco; Agnello, Simonpietro; Koos, Antal; Nemeth, Miklos; Pécz, Béla; Roccaforte, Fabrizio; Giannazzo, Filippo
2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface 1-gen-2023 Sfuncia, G.; Nicotra, G.; Giannazzo, F.; Pecz, B.; Gueorguiev, G. K.; Kakanakova-Georgieva, A.
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 1-gen-2023 Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 1-gen-2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Greco, Giuseppe; Roccaforte, F.; Sfuncia, G.; Nicotra, G.; Cannas, M.; Agnello, S.; Frayssinet, E.; Cordier, Y.; Michon, A.; Koos, A.; Pécz, B.
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability 1-gen-2023 Carbone, B.; Alessandrino, M. S.; Russo, A.; Vitanza, E.; Giannazzo, F.; Fiorenza, P.; Roccaforte, F.
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 1-gen-2023 Fiorenza, P.; Cordiano, F.; Alessandrino, S. M.; Russo, A.; Zanetti, E.; Saggio, M.; Bongiorno, C.; Giannazzo, F.; Roccaforte, F.
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 1-gen-2023 Greco, G.; Fiorenza, P.; Schiliro, E.; Bongiorno, C.; Di Franco, S.; Coulon, P. -M.; Frayssinet, E.; Bartoli, F.; Giannazzo, F.; Alquier, D.; Cordier, Y.; Roccaforte, F.
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 1-gen-2023 Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F