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PELOSI, CLAUDIO

PELOSI, CLAUDIO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 107 (tempo di esecuzione: 0.014 secondi).
Titolo Data di pubblicazione Autore(i) File
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 1-gen-2011 T. Prutskij; C. Pelosi;G. Attolini
Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers 1-gen-2010 Prutskij T.; Pelosi C.
Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer 1-gen-2009 Prutskij, T; Pelosi, C; Britoorta, R
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 1-gen-2009 Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction 1-gen-2009 Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
ALD growth, thermal treatments and characterisation of Al2O3 layers 1-gen-2008 Ghiraldelli, E; Pelosi, C; Gombia, E; Chiavarotti, G; Vanzetti, L
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N.
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions 1-gen-2008 Frigeri, C; Attolini, G; Bosi, M; Pelosi, C; Germini, F
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 1-gen-2008 Frigeri, C; Attolini, G; Bosi, M; Germini, F; Pelosi, C
Epitaxial preparation of germanium cells for photovoltaic and thermophotovoltaic applications 1-gen-2008 Bosi, M; Attolini, G; Ferrari, C; Frigeri, C; Gombia, E; Pelosi, C
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 1-gen-2008 Musayeva, N; Abdullayeva, S; Pelosi, C; Attolini, G; Bosi, M; Clerjaud, B; Benalloul, P; Barthou, C; Jabbarov, R; Gambarov, R
Growth of Dielectric Al2O3 Films by Atomic layer Deposition 1-gen-2008 Ghiraldelli E.; Pelosi C.; Gombia E.; Frigeri C.; Vanzetti L.; Abdullayeva S.
Homo and hetero epitaxy of Germanium using isobutylgermane 1-gen-2008 Attolini, G; Bosi, M; Musayeva, N; Pelosi, C; Ferrari, C; Arumainathan, S; Timò, G
Homo and hetero epitaxy of Germanium using isobutylgermane 1-gen-2008 Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G.
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 1-gen-2008 Bosi, M; Ferrari, C; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 1-gen-2007 Ghilardelli E.; Pelosi C.; Frigeri C.; Chiavarotti G.
AVANCES EN EL ESTUDIO DE CELDAS SOLARES BASADAS EN MATERIALES III-V 1-gen-2007 Plá J.; Barrera M.; Rubinelli F.; García J.; Socolovsky H.; Bosi M.; Attolini G.; Pelosi C.
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 1-gen-2007 Frigeri, C; Pelosi, C; Germini, F; Attolini, G; Bosi, M