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PELOSI, CLAUDIO

PELOSI, CLAUDIO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 44 (tempo di esecuzione: 0.044 secondi).
Titolo Data di pubblicazione Autore(i) File
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 1-gen-2011 T. Prutskij; C. Pelosi;G. Attolini
Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers 1-gen-2010 Prutskij T.; Pelosi C.
Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer 1-gen-2009 Prutskij, T; Pelosi, C; Britoorta, R
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 1-gen-2009 Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction 1-gen-2009 Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
ALD growth, thermal treatments and characterisation of Al2O3 layers 1-gen-2008 Ghiraldelli, E; Pelosi, C; Gombia, E; Chiavarotti, G; Vanzetti, L
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 1-gen-2008 Frigeri, C; Attolini, G; Bosi, M; Germini, F; Pelosi, C
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 1-gen-2008 Musayeva, N; Abdullayeva, S; Pelosi, C; Attolini, G; Bosi, M; Clerjaud, B; Benalloul, P; Barthou, C; Jabbarov, R; Gambarov, R
Growth of Dielectric Al2O3 Films by Atomic layer Deposition 1-gen-2008 Ghiraldelli E.; Pelosi C.; Gombia E.; Frigeri C.; Vanzetti L.; Abdullayeva S.
Homo and hetero epitaxy of Germanium using isobutylgermane 1-gen-2008 Attolini, G; Bosi, M; Musayeva, N; Pelosi, C; Ferrari, C; Arumainathan, S; Timò, G
Homo and hetero epitaxy of Germanium using isobutylgermane 1-gen-2008 Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G.
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 1-gen-2007 Frigeri, C; Pelosi, C; Germini, F; Attolini, G; Bosi, M
Mechanical properties of some binary, ternry and quaternary III-V compound semiconductor alloys 1-gen-2007 Navamathavan R.; Arivuoli D.; Attolini G.; Pelosi C.; Choi C. K.
The potential of III-V semiconductors as terrestrial photovoltaic devices 1-gen-2007 Bosi, Matteo; Pelosi, Claudio
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 1-gen-2006 Pelosi C.; Attolini G.; Bosi M.; Moscatelli D.; Veneroni A.; Masi M.
Characterisation of GaAsN layers grown by MOVPE 1-gen-2006 Pelosi, C; Attolini, G; Bosi, M; Avella, M; Calicchio, C; Musayeva, N
Characterisation of GaAsN layers grown by MOVPE 1-gen-2006 Pelosi, C; Attolini, G; Bosi, M; Avella, M; Calicchio, M; Musayeva, N; Jimenez, J
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate 1-gen-2006 Navamathavan R.; Ganesan V.; Arivuoli D.; Attolini G.; Pelosi C.; Choi C. K.
Colaboración italo-argentina para el estudio de celdas solares basadas en materiales III-V 1-gen-2006 Plá, J; Barrera, M; Bosi, M; Pelosi, C; Attolini, G; Rubinelli, F; Fortin, F; Martínez Bogado, Mg