WATTS, BERNARD ENRICO
WATTS, BERNARD ENRICO
Istituto per la Microelettronica e Microsistemi - IMM
Sol-gel growth and characterization of In2O3 thin films
2018 PalomaresSanchez Salvador, A; Watts Bernard, E; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto
Quantum percolation phase transition and magnetoelectric dipole glass in hexagonal ferrites
2017 Rowley S. E.; Vojta T.; Jones A.T.; Guo W.; Oliveira J.; Morrison F. D.; Lindfield N.; Baggio Saitovitch E.; Watts B. E.; Scott J. F.
Magnetization reversal and interactions in SrFe12O19
2016 Jael Cristina FalohGandarilla; Sergio DiazCastano;Bernard Enrico Watts
Preparation and magnetic properties of the Sr-hexaferrite with foam structure
2016 A.L. Guerrero; D.L. Espericueta; S.A. PalomaresSánchez; J.T. ElizaldeGalindo; B.E Watts;M. MirabalGarcía
Second-Order Magnetic Transition in La0.67Ca0.33-xSr x MnO3 (x = 0.05, 0.06, 0.07, 0.08)
2016 HernándezGonzález; E. L.; Watts; B. E.; PalomaresSánchez; S. A.; Elizalde Galindo; J. T.; MirabalGarcía; M.
Uniaxial ferroelectric quantum criticality in multiferroic hexaferrites BaFe12O19 and SrFe12O19
2016 Rowley, Se; Chai, Ys; Shen, Sp; Sun, Y; Jones, At; Watts, Be; Scott, Jf
Synthesis of powders and thin films of bismuth ferrite from solution: a magneto-electric study
2014 DiazCastanon S.; GarciaZaldivar O.; FalohGandarilla J.; Watts B.E.; CalderonPinar F.; HernandezLandaverde M.A.; EspinozaBeltran F.J.
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si
2012 Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers
2012 Attolini, G; Bosi, M; Watts, Be; Battistig, G; Dobos, L; Pecz, B
beta-SiC NWs grown on patterned and MEMS silicon substrates
2011 Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
2011 Watts, BERNARD ENRICO; Bernard, E; Attolini, Giovanni; Attolini, Giovanni; Besagni, Tullo; Besagni, Tullo; Bosi, Matteo; Bosi, Matteo; Ferrari, Claudio; Ferrari, Claudio; Rossi, Francesca; Rossi, Francesca; Riesz, ; Ferenc, ; Jiang, ; Liudi,
The effect of substrate type on SiC nanowire orientation
2011 Attolini, Giovanni; Rossi, Francesca; Bosi, Matteo; Watts, BERNARD ENRICO; Salviati, Giancarlo
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates
2011 Bosi, Matteo; Bosi, Matteo; Attolini, Giovanni; Attolini, Giovanni; Watts, BERNARD ENRICO; Enrico, Bernard; Rossi, Francesca; Rossi, Francesca; Ferrari, Claudio; Ferrari, Claudio; Riesz, ; Ferenc, ; Jiang, ; Liudi,
CBr4 as precursor for VPE growth of cubic silicon carbide
2010 Watts, B E; Bosi, M; Attolini, G; Battistig, G; Dobos, L; Pecz, B
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
2010 Attolini, G; Bosi, M; Rossi, F; Watts, BERNARD ENRICO; Salviati, G; Battistig, G; Dobos, L; Pecz, B
TEM and SEM-CL studies of SiC Nanowires
2010 Rossi, F; Fabbri, F; Attolini, G; Bosi, M; Watts, BERNARD ENRICO; Salviati, G
A comparative study of the morphology of 3C-SiC grown at different C/Si ratios
2009 Attolini, G; Watts, BERNARD ENRICO; Bosi, M; Rossi, F; Riesz, F
A new growth method for the synthesis of 3C-SiC nanowires
2009 Attolini, G; Rossi, F; Fabbri, F; Bosi, M; Watts, BERNARD ENRICO; Salviati, G
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications
2009 Bosi, M; Watts, B E; Attolini, G; Ferrari, C; Frigeri, C; Salviati, G; Poggi, A; Mancarella, F; Roncaglia, A; Martinez Sacristan, O; Hortelano, V
A novel mechanism to explain wafer bending during the growth of SiC films on Si
2008 Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Sol-gel growth and characterization of In2O3 thin films | 1-gen-2018 | PalomaresSanchez Salvador, A; Watts Bernard, E; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto | |
Quantum percolation phase transition and magnetoelectric dipole glass in hexagonal ferrites | 1-gen-2017 | Rowley S. E.; Vojta T.; Jones A.T.; Guo W.; Oliveira J.; Morrison F. D.; Lindfield N.; Baggio Saitovitch E.; Watts B. E.; Scott J. F. | |
Magnetization reversal and interactions in SrFe12O19 | 1-gen-2016 | Jael Cristina FalohGandarilla; Sergio DiazCastano;Bernard Enrico Watts | |
Preparation and magnetic properties of the Sr-hexaferrite with foam structure | 1-gen-2016 | A.L. Guerrero; D.L. Espericueta; S.A. PalomaresSánchez; J.T. ElizaldeGalindo; B.E Watts;M. MirabalGarcía | |
Second-Order Magnetic Transition in La0.67Ca0.33-xSr x MnO3 (x = 0.05, 0.06, 0.07, 0.08) | 1-gen-2016 | HernándezGonzález; E. L.; Watts; B. E.; PalomaresSánchez; S. A.; Elizalde Galindo; J. T.; MirabalGarcía; M. | |
Uniaxial ferroelectric quantum criticality in multiferroic hexaferrites BaFe12O19 and SrFe12O19 | 1-gen-2016 | Rowley, Se; Chai, Ys; Shen, Sp; Sun, Y; Jones, At; Watts, Be; Scott, Jf | |
Synthesis of powders and thin films of bismuth ferrite from solution: a magneto-electric study | 1-gen-2014 | DiazCastanon S.; GarciaZaldivar O.; FalohGandarilla J.; Watts B.E.; CalderonPinar F.; HernandezLandaverde M.A.; EspinozaBeltran F.J. | |
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si | 1-gen-2012 | Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M | |
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers | 1-gen-2012 | Attolini, G; Bosi, M; Watts, Be; Battistig, G; Dobos, L; Pecz, B | |
beta-SiC NWs grown on patterned and MEMS silicon substrates | 1-gen-2011 | Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella | |
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates | 1-gen-2011 | Watts, BERNARD ENRICO; Bernard, E; Attolini, Giovanni; Attolini, Giovanni; Besagni, Tullo; Besagni, Tullo; Bosi, Matteo; Bosi, Matteo; Ferrari, Claudio; Ferrari, Claudio; Rossi, Francesca; Rossi, Francesca; Riesz, ; Ferenc, ; Jiang, ; Liudi, | |
The effect of substrate type on SiC nanowire orientation | 1-gen-2011 | Attolini, Giovanni; Rossi, Francesca; Bosi, Matteo; Watts, BERNARD ENRICO; Salviati, Giancarlo | |
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates | 1-gen-2011 | Bosi, Matteo; Bosi, Matteo; Attolini, Giovanni; Attolini, Giovanni; Watts, BERNARD ENRICO; Enrico, Bernard; Rossi, Francesca; Rossi, Francesca; Ferrari, Claudio; Ferrari, Claudio; Riesz, ; Ferenc, ; Jiang, ; Liudi, | |
CBr4 as precursor for VPE growth of cubic silicon carbide | 1-gen-2010 | Watts, B E; Bosi, M; Attolini, G; Battistig, G; Dobos, L; Pecz, B | |
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide | 1-gen-2010 | Attolini, G; Bosi, M; Rossi, F; Watts, BERNARD ENRICO; Salviati, G; Battistig, G; Dobos, L; Pecz, B | |
TEM and SEM-CL studies of SiC Nanowires | 1-gen-2010 | Rossi, F; Fabbri, F; Attolini, G; Bosi, M; Watts, BERNARD ENRICO; Salviati, G | |
A comparative study of the morphology of 3C-SiC grown at different C/Si ratios | 1-gen-2009 | Attolini, G; Watts, BERNARD ENRICO; Bosi, M; Rossi, F; Riesz, F | |
A new growth method for the synthesis of 3C-SiC nanowires | 1-gen-2009 | Attolini, G; Rossi, F; Fabbri, F; Bosi, M; Watts, BERNARD ENRICO; Salviati, G | |
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications | 1-gen-2009 | Bosi, M; Watts, B E; Attolini, G; Ferrari, C; Frigeri, C; Salviati, G; Poggi, A; Mancarella, F; Roncaglia, A; Martinez Sacristan, O; Hortelano, V | |
A novel mechanism to explain wafer bending during the growth of SiC films on Si | 1-gen-2008 | Watts B. E.; Attolini G.; Bosi M.; Frigeri C. |