Cubic silicon carbide nanowires (beta-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers. The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with < 111 > growth axis and stacking defects on (111) planes.
beta-SiC NWs grown on patterned and MEMS silicon substrates
Watts;Attolini;Giovanni;Rossi;Francesca;Bosi;Matteo;Salviati;Giancarlo;Mancarella;Fulvio;Ferri;Matteo;Roncaglia;Alberto;Poggi;Antonella
2011
Abstract
Cubic silicon carbide nanowires (beta-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers. The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with < 111 > growth axis and stacking defects on (111) planes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
