CNR Institutional Research Information System

DE SALVADOR, DAVIDE
 Distribuzione geografica
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Continente #
AS - Asia 1.022
NA - Nord America 615
EU - Europa 237
SA - Sud America 191
AF - Africa 19
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 3
Totale 2.103
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Nazione #
US - Stati Uniti d'America 578
SG - Singapore 430
CN - Cina 262
BR - Brasile 144
VN - Vietnam 102
HK - Hong Kong 87
FR - Francia 72
KR - Corea 42
EE - Estonia 40
DE - Germania 31
IT - Italia 22
NL - Olanda 21
GB - Regno Unito 20
JP - Giappone 17
BD - Bangladesh 16
CA - Canada 16
AR - Argentina 14
IN - India 14
ID - Indonesia 11
EC - Ecuador 10
IQ - Iraq 9
ES - Italia 7
IL - Israele 7
PY - Paraguay 7
VE - Venezuela 7
ZA - Sudafrica 7
MX - Messico 6
FI - Finlandia 5
MA - Marocco 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
CR - Costa Rica 3
JM - Giamaica 3
PH - Filippine 3
TR - Turchia 3
UY - Uruguay 3
AU - Australia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EG - Egitto 2
GR - Grecia 2
GT - Guatemala 2
MY - Malesia 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
SV - El Salvador 2
TN - Tunisia 2
UA - Ucraina 2
UZ - Uzbekistan 2
AL - Albania 1
AT - Austria 1
BB - Barbados 1
BE - Belgio 1
BL - Saint Barthelemy 1
BO - Bolivia 1
BY - Bielorussia 1
CY - Cipro 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
IM - Isola di Man 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PL - Polonia 1
PR - Porto Rico 1
SE - Svezia 1
TG - Togo 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 2.087
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Città #
Singapore 244
Santa Clara 185
Hefei 85
Hong Kong 84
San Jose 66
Ashburn 59
Beijing 52
Lauterbourg 45
Seoul 42
Tallinn 40
Los Angeles 33
Hanoi 32
Ho Chi Minh City 31
Frankfurt am Main 17
New York 13
São Paulo 12
Tokyo 10
Guangzhou 9
Düsseldorf 8
Montreal 6
Orem 6
Brasília 5
Buffalo 5
Can Tho 5
Chicago 5
Da Nang 5
Guayaquil 5
Haiphong 5
Johannesburg 5
Minamishinagawa 5
Porto Alegre 5
Rio de Janeiro 5
Asunción 4
Atlanta 4
Boston 4
Dallas 4
Philadelphia 4
Portsmouth 4
Ajax 3
Arlington 3
Bexley 3
Bologna 3
Brooklyn 3
Caxias do Sul 3
Charlotte 3
Denver 3
Dhaka 3
Helsinki 3
Las Vegas 3
Montevideo 3
Phoenix 3
Quito 3
San Francisco 3
St Louis 3
São José dos Campos 3
Valencia 3
Amsterdam 2
Baghdad 2
Bengaluru 2
Biên Hòa 2
Buenos Aires 2
Burnsville 2
Bắc Giang 2
Bến Tre 2
Cairo 2
Campinas 2
Campo Grande 2
Chennai 2
City of London 2
Collecchio 2
Council Bluffs 2
Curitiba 2
Dubuque 2
Due Carrare 2
Erbil 2
Georgetown 2
Glasgow 2
Indpls 2
Jakarta 2
Manaus 2
Manchester 2
Margate 2
Maxton 2
Memphis 2
Mexico City 2
Miami 2
Milan 2
Milwaukee 2
Mumbai 2
Munich 2
New Delhi 2
Nova Iguaçu 2
Prague 2
Queens 2
Raleigh 2
Ramona 2
Roubaix 2
Salina 2
San José 2
San Salvador 2
Totale 1.300
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Nome #
B clustering in amorphous Si 132
Mechanism of B diffusion in crystalline Ge under proton irradiation 88
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 72
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 64
Role of self-interstitials on B diffusion in Ge 61
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting 54
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 53
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 49
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 48
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 48
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium 48
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 48
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 47
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 47
Mechanisms of boron diffusion in silicon and germanium 47
Dissolution kinetic of boron clusters in crystalline Si 46
Formation and dissolution of D-N complexes in dilute nitrides 46
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 44
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 41
N-type doping of Ge by As implantation and excimer laser annealing 41
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 40
Extended point defects in crystalline materials: Ge and Si 39
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 39
Role of ion mass on damage accumulation during ion implantation in Ge 38
Mechanism of boron diffusion in amorphous silicon 38
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 38
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 37
Local structure of nitrogen-hydrogen complexes in dilute nitride 37
Oxygen behavior in germanium during melting laser thermal annealing 37
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 36
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 36
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 34
Local structure of nitrogen-hydrogen complexes in dilute nitrides 33
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 30
Effect of strain on the carrier mobility in heavily doped p-type Si 30
Optimal crystal surface for efficient channeling in the new generation of hadron machines 29
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 28
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline 28
Iso-concentration study of atomistic mechanism of B diffusion in Si 27
Carrier mobility and strain effect in heavily doped p-type Si 27
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 27
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 26
Lattice strain induced by boron clusters in crystalline silicon 26
Detailed arsenic concentration profiles at Si/SiO2 interfaces 25
Double volume reflection of a proton beam by a sequence of two bent crystals 25
Deflection of 400 GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron 25
Indirect diffusion mechanism of boron atoms in crystalline and amorphous silicon 24
Lattice strain and composition of Boron-Interstitial Clusters in crystalline silicon 22
Atomistic mechanism of boron diffusion in silicon 22
Double volume reflection of a proton beam by a sequence of two bent crystals (vol 658, pg 109, 2008) 21
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 20
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal 19
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 16
Totale 2.103
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Categoria #
all - tutte 7.821
article - articoli 7.467
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.288
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202420 0 0 0 0 0 0 0 0 1 0 19 0
2024/2025790 4 3 60 71 126 60 6 47 30 46 167 170
2025/20261.175 69 95 98 191 216 80 186 69 55 64 24 28
2026/2027118 79 39 0 0 0 0 0 0 0 0 0 0
Totale 2.103