CNR Institutional Research Information System

DE SALVADOR, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 204
AS - Asia 94
EU - Europa 44
Totale 342
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Nazione #
US - Stati Uniti d'America 204
SG - Singapore 75
EE - Estonia 40
CN - Cina 10
KR - Corea 9
FI - Finlandia 2
BE - Belgio 1
DE - Germania 1
Totale 342
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Città #
Santa Clara 182
Singapore 51
Tallinn 40
Guangzhou 9
Seoul 9
Ashburn 2
Helsinki 2
Brussels 1
Fort Worth 1
Frankfurt am Main 1
Phoenix 1
Totale 299
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Nome #
B clustering in amorphous Si 46
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 12
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 11
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 10
Formation and dissolution of D-N complexes in dilute nitrides 9
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 9
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 8
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 8
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline 8
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 8
Deflection of 400 GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron 8
Dissolution kinetic of boron clusters in crystalline Si 7
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 7
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 7
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 7
Role of ion mass on damage accumulation during ion implantation in Ge 7
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 7
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 7
Mechanism of boron diffusion in amorphous silicon 7
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 7
Optimal crystal surface for efficient channeling in the new generation of hadron machines 7
Double volume reflection of a proton beam by a sequence of two bent crystals (vol 658, pg 109, 2008) 7
Local structure of nitrogen-hydrogen complexes in dilute nitrides 7
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 7
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 7
Mechanism of B diffusion in crystalline Ge under proton irradiation 6
Mechanisms of boron diffusion in silicon and germanium 6
Effect of strain on the carrier mobility in heavily doped p-type Si 6
Local structure of nitrogen-hydrogen complexes in dilute nitride 6
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 6
Double volume reflection of a proton beam by a sequence of two bent crystals 6
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal 6
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 5
Extended point defects in crystalline materials: Ge and Si 5
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 5
N-type doping of Ge by As implantation and excimer laser annealing 5
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 5
Atomistic mechanism of boron diffusion in silicon 5
Role of self-interstitials on B diffusion in Ge 4
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 4
Indirect diffusion mechanism of boron atoms in crystalline and amorphous silicon 4
Lattice strain and composition of Boron-Interstitial Clusters in crystalline silicon 4
Iso-concentration study of atomistic mechanism of B diffusion in Si 4
Carrier mobility and strain effect in heavily doped p-type Si 4
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 4
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 3
Lattice strain induced by boron clusters in crystalline silicon 3
Detailed arsenic concentration profiles at Si/SiO2 interfaces 3
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 3
Totale 347
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Categoria #
all - tutte 1.495
article - articoli 1.415
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.910
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202420 0 0 0 0 0 0 0 0 1 0 19 0
2024/2025327 4 3 60 71 126 60 3 0 0 0 0 0
Totale 347