CNR Institutional Research Information System

DE SALVADOR, DAVIDE
 Distribuzione geografica
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Continente #
AS - Asia 1.014
NA - Nord America 579
EU - Europa 231
SA - Sud America 182
AF - Africa 19
OC - Oceania 2
Totale 2.027
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Nazione #
US - Stati Uniti d'America 553
SG - Singapore 430
CN - Cina 262
BR - Brasile 143
VN - Vietnam 102
HK - Hong Kong 86
FR - Francia 72
KR - Corea 42
EE - Estonia 40
DE - Germania 30
IT - Italia 21
NL - Olanda 21
GB - Regno Unito 19
JP - Giappone 17
AR - Argentina 14
IN - India 14
BD - Bangladesh 12
CA - Canada 11
ID - Indonesia 9
IQ - Iraq 9
EC - Ecuador 8
IL - Israele 7
PY - Paraguay 7
ZA - Sudafrica 7
MX - Messico 6
ES - Italia 5
FI - Finlandia 5
MA - Marocco 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
PH - Filippine 3
TR - Turchia 3
UY - Uruguay 3
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EG - Egitto 2
GR - Grecia 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
SV - El Salvador 2
TN - Tunisia 2
UA - Ucraina 2
UZ - Uzbekistan 2
VE - Venezuela 2
AT - Austria 1
AU - Australia 1
BB - Barbados 1
BE - Belgio 1
BO - Bolivia 1
BY - Bielorussia 1
CO - Colombia 1
CY - Cipro 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
GT - Guatemala 1
IM - Isola di Man 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SE - Svezia 1
TG - Togo 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 2.027
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Città #
Singapore 244
Santa Clara 183
Hefei 85
Hong Kong 84
San Jose 66
Ashburn 55
Beijing 52
Lauterbourg 45
Seoul 42
Tallinn 40
Los Angeles 33
Hanoi 32
Ho Chi Minh City 31
Frankfurt am Main 17
New York 12
São Paulo 12
Tokyo 10
Guangzhou 9
Düsseldorf 8
Montreal 6
Orem 6
Buffalo 5
Can Tho 5
Chicago 5
Da Nang 5
Guayaquil 5
Haiphong 5
Johannesburg 5
Minamishinagawa 5
Porto Alegre 5
Rio de Janeiro 5
Asunción 4
Atlanta 4
Boston 4
Brasília 4
Dallas 4
Portsmouth 4
Arlington 3
Bexley 3
Bologna 3
Brooklyn 3
Caxias do Sul 3
Denver 3
Helsinki 3
Las Vegas 3
Montevideo 3
Philadelphia 3
Phoenix 3
Quito 3
San Francisco 3
St Louis 3
São José dos Campos 3
Amsterdam 2
Baghdad 2
Bengaluru 2
Biên Hòa 2
Buenos Aires 2
Burnsville 2
Bắc Giang 2
Bến Tre 2
Cairo 2
Campinas 2
Campo Grande 2
Charlotte 2
Chennai 2
City of London 2
Collecchio 2
Council Bluffs 2
Curitiba 2
Dhaka 2
Dubuque 2
Due Carrare 2
Erbil 2
Georgetown 2
Glasgow 2
Indpls 2
Jakarta 2
Manaus 2
Manchester 2
Margate 2
Maxton 2
Memphis 2
Mexico City 2
Milan 2
Milwaukee 2
Mumbai 2
New Delhi 2
Nova Iguaçu 2
Prague 2
Raleigh 2
Ramona 2
Roubaix 2
Salina 2
San Salvador 2
Santa Fe 2
St. Petersburg 2
São Bernardo do Campo 2
Tashkent 2
Turku 2
Valencia 2
Totale 1.287
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Nome #
B clustering in amorphous Si 128
Mechanism of B diffusion in crystalline Ge under proton irradiation 88
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 72
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 64
Role of self-interstitials on B diffusion in Ge 61
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting 52
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 51
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 48
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 48
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium 47
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 47
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 46
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 46
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 45
Mechanisms of boron diffusion in silicon and germanium 45
Formation and dissolution of D-N complexes in dilute nitrides 45
Dissolution kinetic of boron clusters in crystalline Si 43
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 43
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 41
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 39
Role of ion mass on damage accumulation during ion implantation in Ge 38
Extended point defects in crystalline materials: Ge and Si 38
N-type doping of Ge by As implantation and excimer laser annealing 38
Mechanism of boron diffusion in amorphous silicon 38
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 38
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 37
Local structure of nitrogen-hydrogen complexes in dilute nitride 37
Oxygen behavior in germanium during melting laser thermal annealing 37
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 36
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 36
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 34
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 33
Local structure of nitrogen-hydrogen complexes in dilute nitrides 33
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 29
Effect of strain on the carrier mobility in heavily doped p-type Si 29
Optimal crystal surface for efficient channeling in the new generation of hadron machines 29
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 27
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 27
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline 26
Iso-concentration study of atomistic mechanism of B diffusion in Si 26
Carrier mobility and strain effect in heavily doped p-type Si 26
Lattice strain induced by boron clusters in crystalline silicon 25
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 24
Indirect diffusion mechanism of boron atoms in crystalline and amorphous silicon 24
Deflection of 400 GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron 24
Detailed arsenic concentration profiles at Si/SiO2 interfaces 23
Double volume reflection of a proton beam by a sequence of two bent crystals 23
Double volume reflection of a proton beam by a sequence of two bent crystals (vol 658, pg 109, 2008) 21
Atomistic mechanism of boron diffusion in silicon 21
Lattice strain and composition of Boron-Interstitial Clusters in crystalline silicon 19
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 19
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 15
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal 14
Totale 2.043
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Categoria #
all - tutte 7.265
article - articoli 6.939
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.204
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202420 0 0 0 0 0 0 0 0 1 0 19 0
2024/2025790 4 3 60 71 126 60 6 47 30 46 167 170
2025/20261.175 69 95 98 191 216 80 186 69 55 64 24 28
2026/202758 58 0 0 0 0 0 0 0 0 0 0 0
Totale 2.043