CNR Institutional Research Information System

DE SALVADOR, DAVIDE
 Distribuzione geografica
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Continente #
AS - Asia 1.009
NA - Nord America 499
EU - Europa 226
SA - Sud America 181
AF - Africa 19
OC - Oceania 2
Totale 1.936
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Nazione #
US - Stati Uniti d'America 477
SG - Singapore 429
CN - Cina 262
BR - Brasile 142
VN - Vietnam 101
HK - Hong Kong 86
FR - Francia 72
KR - Corea 42
EE - Estonia 40
DE - Germania 30
NL - Olanda 21
GB - Regno Unito 19
JP - Giappone 17
IT - Italia 16
AR - Argentina 14
IN - India 14
BD - Bangladesh 9
ID - Indonesia 9
IQ - Iraq 9
CA - Canada 8
EC - Ecuador 8
IL - Israele 7
PY - Paraguay 7
ZA - Sudafrica 7
MX - Messico 6
ES - Italia 5
FI - Finlandia 5
MA - Marocco 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
PH - Filippine 3
TR - Turchia 3
UY - Uruguay 3
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EG - Egitto 2
GR - Grecia 2
PK - Pakistan 2
RU - Federazione Russa 2
SA - Arabia Saudita 2
SV - El Salvador 2
TN - Tunisia 2
UA - Ucraina 2
UZ - Uzbekistan 2
VE - Venezuela 2
AT - Austria 1
AU - Australia 1
BB - Barbados 1
BE - Belgio 1
BO - Bolivia 1
BY - Bielorussia 1
CO - Colombia 1
CY - Cipro 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
IM - Isola di Man 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SE - Svezia 1
TG - Togo 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 1.936
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Città #
Singapore 243
Santa Clara 183
Hefei 85
Hong Kong 84
San Jose 56
Beijing 52
Lauterbourg 45
Ashburn 44
Seoul 42
Tallinn 40
Los Angeles 33
Hanoi 32
Ho Chi Minh City 31
Frankfurt am Main 17
São Paulo 12
New York 11
Tokyo 10
Guangzhou 9
Düsseldorf 8
Orem 6
Buffalo 5
Can Tho 5
Chicago 5
Da Nang 5
Guayaquil 5
Haiphong 5
Johannesburg 5
Minamishinagawa 5
Porto Alegre 5
Rio de Janeiro 5
Asunción 4
Atlanta 4
Brasília 4
Montreal 4
Portsmouth 4
Bexley 3
Caxias do Sul 3
Dallas 3
Denver 3
Helsinki 3
Montevideo 3
Phoenix 3
Quito 3
São José dos Campos 3
Amsterdam 2
Baghdad 2
Bengaluru 2
Biên Hòa 2
Bologna 2
Boston 2
Brooklyn 2
Buenos Aires 2
Bắc Giang 2
Bến Tre 2
Cairo 2
Campinas 2
Campo Grande 2
Charlotte 2
Chennai 2
City of London 2
Collecchio 2
Council Bluffs 2
Curitiba 2
Dhaka 2
Due Carrare 2
Erbil 2
Glasgow 2
Jakarta 2
Manaus 2
Manchester 2
Mexico City 2
Mumbai 2
New Delhi 2
Prague 2
Raleigh 2
Roubaix 2
San Salvador 2
Santa Fe 2
St Louis 2
São Bernardo do Campo 2
Tashkent 2
Turku 2
Verona 2
Vũng Tàu 2
Washington 2
Abatiá 1
Acarigua 1
Adana 1
Addis Ababa 1
Ajax 1
Algiers 1
Allentown 1
Almaty 1
Americana 1
Angat 1
Apucarana 1
Apóstoles 1
Aracaju 1
Araure 1
Arlington 1
Totale 1.237
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Nome #
B clustering in amorphous Si 126
Mechanism of B diffusion in crystalline Ge under proton irradiation 87
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 70
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 62
Role of self-interstitials on B diffusion in Ge 60
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 51
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting 50
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 48
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 46
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 46
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium 45
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 45
Mechanisms of boron diffusion in silicon and germanium 44
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 43
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 43
Dissolution kinetic of boron clusters in crystalline Si 42
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 40
Formation and dissolution of D-N complexes in dilute nitrides 40
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 39
Role of ion mass on damage accumulation during ion implantation in Ge 38
N-type doping of Ge by As implantation and excimer laser annealing 37
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 36
Extended point defects in crystalline materials: Ge and Si 36
Mechanism of boron diffusion in amorphous silicon 36
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 36
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 36
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 35
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 33
Local structure of nitrogen-hydrogen complexes in dilute nitride 33
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 33
Oxygen behavior in germanium during melting laser thermal annealing 33
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 32
Effect of strain on the carrier mobility in heavily doped p-type Si 29
Optimal crystal surface for efficient channeling in the new generation of hadron machines 28
Local structure of nitrogen-hydrogen complexes in dilute nitrides 28
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 27
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 27
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline 26
Iso-concentration study of atomistic mechanism of B diffusion in Si 26
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 25
Lattice strain induced by boron clusters in crystalline silicon 24
Carrier mobility and strain effect in heavily doped p-type Si 24
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 22
Indirect diffusion mechanism of boron atoms in crystalline and amorphous silicon 21
Detailed arsenic concentration profiles at Si/SiO2 interfaces 21
Double volume reflection of a proton beam by a sequence of two bent crystals 21
Deflection of 400 GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron 21
Atomistic mechanism of boron diffusion in silicon 20
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 18
Double volume reflection of a proton beam by a sequence of two bent crystals (vol 658, pg 109, 2008) 18
Lattice strain and composition of Boron-Interstitial Clusters in crystalline silicon 17
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal 14
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 14
Totale 1.952
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Categoria #
all - tutte 6.578
article - articoli 6.289
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.867
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202420 0 0 0 0 0 0 0 0 1 0 19 0
2024/2025790 4 3 60 71 126 60 6 47 30 46 167 170
2025/20261.142 69 95 98 191 216 80 186 69 55 64 19 0
Totale 1.952