The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18OEºm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 ¬?C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.
Epitaxial layers grown with HCl addition: A comparison with the standard process
La Via F;Roccaforte F;Di Franco S;
2006
Abstract
The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18OEºm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 ¬?C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
