We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through dielectrics and barriers and in general for mapping of physical properties in wide band gap materials, processing and devices. Measurements through conductive layers are described discussing the limits and potentialities. Carrier profiling by SPM is presented and critically discussed as a complex method, crossing information from several techniques, to extract more insights related to carrier distribution.
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
Raineri V;Giannazzo F;Roccaforte F
2009
Abstract
We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through dielectrics and barriers and in general for mapping of physical properties in wide band gap materials, processing and devices. Measurements through conductive layers are described discussing the limits and potentialities. Carrier profiling by SPM is presented and critically discussed as a complex method, crossing information from several techniques, to extract more insights related to carrier distribution.File in questo prodotto:
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