We used scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) to determine the drift hole mobility in nanometer thick Si/Si0.75Ge0.25/Si quantum wells (QWs), from the carrier concentration profiles (obtained by SCM) and the local resistivity values (obtained by SSRM). A relevant decrease of the hole mobility at room temperature was observed when reducing the QW width from 10 nm down to 1 nm. This effect has been explained in terms of the increasing role of surface scattering at the Si/SiGe interface for lower QW widths.
Drift mobility in quantum nanostructures by scanning probe microscopy
Giannazzo F;Raineri V;Mirabella S;Impellizzeri G;Priolo F
2006
Abstract
We used scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) to determine the drift hole mobility in nanometer thick Si/Si0.75Ge0.25/Si quantum wells (QWs), from the carrier concentration profiles (obtained by SCM) and the local resistivity values (obtained by SSRM). A relevant decrease of the hole mobility at room temperature was observed when reducing the QW width from 10 nm down to 1 nm. This effect has been explained in terms of the increasing role of surface scattering at the Si/SiGe interface for lower QW widths.File in questo prodotto:
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