The recent activity performed on scanning capacitance microscopy is reviewed. The influence of surface states on measurements is described and reproducibility and sensitivity issues are addressed. Some examples of applications on devices and process characterisation and interpretation are shown. The application of the method to SiC is also discussed.
Scanning capacitance microscopy of semiconductors for process and device characterisation
Raineri V;Giannazzo F;Mirabella S;Priolo F;Napolitani E
2003
Abstract
The recent activity performed on scanning capacitance microscopy is reviewed. The influence of surface states on measurements is described and reproducibility and sensitivity issues are addressed. Some examples of applications on devices and process characterisation and interpretation are shown. The application of the method to SiC is also discussed.File in questo prodotto:
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