(Au nanocluster)/6H-SiC Schottky contacts were electrically characterized by conductive atomic force microscopy, collecting a high number of current-voltage (I-V) curves. The main observed result is the Schottky barrier height (SBH) dependence on the cluster size. The SBH increases from 1.35 +/- 0.01 to 1.77 +/- 0.01 eV when the cluster size increases from 1.5 to 6.8 nm and it tends, asymptotically, to the theoretical SBH of the macroscopic contact Au/SiC (similar to 1.9 eV). This behavior is interpreted considering the thermoionic transport theory through the Au cluster/SiC barrier coupled with the concept of ballistic transport within few electron quantum dots.

Size-dependent Schottky barrier height in self-assembled gold nanoparticles

Ruffino F;Giannazzo F;Roccaforte F;Raineri V
2006

Abstract

(Au nanocluster)/6H-SiC Schottky contacts were electrically characterized by conductive atomic force microscopy, collecting a high number of current-voltage (I-V) curves. The main observed result is the Schottky barrier height (SBH) dependence on the cluster size. The SBH increases from 1.35 +/- 0.01 to 1.77 +/- 0.01 eV when the cluster size increases from 1.5 to 6.8 nm and it tends, asymptotically, to the theoretical SBH of the macroscopic contact Au/SiC (similar to 1.9 eV). This behavior is interpreted considering the thermoionic transport theory through the Au cluster/SiC barrier coupled with the concept of ballistic transport within few electron quantum dots.
2006
Istituto per la Microelettronica e Microsistemi - IMM
INFM
SILICON-CARBIDE
ELECTRON
DIAMOND
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/155306
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