In a metallic manganite, the substitution of Mn+3 by Ga+3 locally destroys both the ferromagnetic order and the Jahn-Teller distortion, without heavily affecting the crystal structure. One can thus observe an unusual metal-to-insulator transition, which is induced neither by the temperature nor by changes in the divalent-ion doping. This transition is studied here by comparing the infrared reflectivity of five samples of La2/3Sr1/3Mn1-xGaxO3, with x increasing from 0 to 0.30. The dramatic effect of Ga on the transport properties is monitored through the decrease in the number of free carriers and the increase in their effective mass, until a good metal such as La2/3Sr1/3MnO3 is turned into an insulator at all temperatures. A simple model which links the measured optical parameters to the magnetization M(x,T) well describes the behavior of the plasma frequency, the scattering rate, and the midinfrared absorption, throughout the Ga-induced metal-to-insulator transition.

Effect of Ga substitution on the optical properties of La-Sr manganites

Nucara A;Maselli P;Orgiani P;Maritato L;Calvani P
2008

Abstract

In a metallic manganite, the substitution of Mn+3 by Ga+3 locally destroys both the ferromagnetic order and the Jahn-Teller distortion, without heavily affecting the crystal structure. One can thus observe an unusual metal-to-insulator transition, which is induced neither by the temperature nor by changes in the divalent-ion doping. This transition is studied here by comparing the infrared reflectivity of five samples of La2/3Sr1/3Mn1-xGaxO3, with x increasing from 0 to 0.30. The dramatic effect of Ga on the transport properties is monitored through the decrease in the number of free carriers and the increase in their effective mass, until a good metal such as La2/3Sr1/3MnO3 is turned into an insulator at all temperatures. A simple model which links the measured optical parameters to the magnetization M(x,T) well describes the behavior of the plasma frequency, the scattering rate, and the midinfrared absorption, throughout the Ga-induced metal-to-insulator transition.
2008
INFM
INFM
COLOSSAL MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
CLEAVED SURFACES
DOUBLE-EXCHANGE
LA1-XSRXMNO3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/159178
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