This work reports on the electrical properties of CeO2 thin films grown on AlGaN/GaN heterostructures by metal-organic chemical vapor deposition (MOCVD). The high permittivity (?=26) and the 4 orders of magnitude reduction of the leakage current suggest that the material can be very promising if integrated as gate insulator in HEMT technology. The conduction mechanism through the insulator was demonstrated to be a Poole-Frenkel emission, with characteristic energy of 0.9eV from the conduction band. The traps distribution was investigated by the conductance method .
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure
P Fiorenza;G Greco;G Fisichella;R Lo Nigro;F Roccaforte
2014
Abstract
This work reports on the electrical properties of CeO2 thin films grown on AlGaN/GaN heterostructures by metal-organic chemical vapor deposition (MOCVD). The high permittivity (?=26) and the 4 orders of magnitude reduction of the leakage current suggest that the material can be very promising if integrated as gate insulator in HEMT technology. The conduction mechanism through the insulator was demonstrated to be a Poole-Frenkel emission, with characteristic energy of 0.9eV from the conduction band. The traps distribution was investigated by the conductance method .File in questo prodotto:
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