In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the material quality of the substrate. Moreover a different temperature dependence of the spe-cific contact resistance RC has been observed.
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality
G Greco;C Bongiorno;S Di Franco;F Giannazzo;F Roccaforte
2014
Abstract
In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the material quality of the substrate. Moreover a different temperature dependence of the spe-cific contact resistance RC has been observed.File in questo prodotto:
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