We have investigated 3C-SiC layers grown on silicon and on poly-Si in order to realize test MEMS structures. The residual strain of the films was investigated by the fabrication of cantilevers, beams, springs and we successfully fabricated a Double-Ended-Tuning-Fork double clamped SiC resonator on the film, with perfectly aligned actuation electrode.
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si
Bosi M;Attolini G;Watts BE;Roncaglia A;Poggi A;Mancarella F;Moscatelli F;Belsito L;Ferri M
2012
Abstract
We have investigated 3C-SiC layers grown on silicon and on poly-Si in order to realize test MEMS structures. The residual strain of the films was investigated by the fabrication of cantilevers, beams, springs and we successfully fabricated a Double-Ended-Tuning-Fork double clamped SiC resonator on the film, with perfectly aligned actuation electrode.File in questo prodotto:
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