In this article, using finite element simulations and analytical approaches, we demonstrate that planar rotators [1] can be effectively used to determine both the uniform and gradient residual stresses in thin films with higher accuracy compared to other microstructures.

Complete determination of the local stress field in epitaxial thin films using single microstructure

Anzalone Ruggero;Piluso Nico;La Magna Antonino;La Via Francesco
2011

Abstract

In this article, using finite element simulations and analytical approaches, we demonstrate that planar rotators [1] can be effectively used to determine both the uniform and gradient residual stresses in thin films with higher accuracy compared to other microstructures.
2011
Istituto per la Microelettronica e Microsistemi - IMM
Stress
MEMS
finite element simulations
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/305594
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