The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu(3)Ti(4)O(12) (CCTO) thin films deposited by MOCVD on IrO(2) bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

Scanning Probe Microscopy on heterogeneous CaCu(3)Ti(4)O(12) thin films

Fiorenza P;Lo Nigro R;Raineri V
2011

Abstract

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu(3)Ti(4)O(12) (CCTO) thin films deposited by MOCVD on IrO(2) bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.
2011
Istituto per la Microelettronica e Microsistemi - IMM
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/38067
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact