The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu(3)Ti(4)O(12) (CCTO) thin films deposited by MOCVD on IrO(2) bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.
Scanning Probe Microscopy on heterogeneous CaCu(3)Ti(4)O(12) thin films
Fiorenza P;Lo Nigro R;Raineri V
2011
Abstract
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu(3)Ti(4)O(12) (CCTO) thin films deposited by MOCVD on IrO(2) bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.