The results of a new epitaxial process using ail industrial 6 x 2(n) wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2 > 0.05%) and an increase of the growth rate until about 20 mu m/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics.
High growth rate process in a SiC horizontal CVD reactor using HCl
La Via F;Roccaforte F;Giannazzo F;
2006
Abstract
The results of a new epitaxial process using ail industrial 6 x 2(n) wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2 > 0.05%) and an increase of the growth rate until about 20 mu m/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics.File in questo prodotto:
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