High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr2O3 films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated.
Praseodymium based high-k dielectrics grown on Si and SiC substrates
Lo Nigro R;Toro RG;Raineri V;Fiorenza P
2006
Abstract
High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr2O3 films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
