Calcium copper titanate, CaCU3Ti4O12 (CCTO), thin films have been fabricated by Metal Organic Chemical Vapor Deposition on silicon substrates buffered with two different low-k interlayers, namely SiO2 and Si3N4. Depositions have been carried out from a molten mixture consisting of the Ca (hfa)2 center dot tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme=2,5,8,11,14-pentaoxapentadecane; Htmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr=iso-propoxide] precursors. The chemical stability of CCTO films on both the SiO2 and Si3N4 low-k layers has been investigated by transmission electron microscopy in the perspective of their implementation in capacitor devices.
Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates
Lo Nigro R;Toro RG;Fiorenza P;Raineri V
2007
Abstract
Calcium copper titanate, CaCU3Ti4O12 (CCTO), thin films have been fabricated by Metal Organic Chemical Vapor Deposition on silicon substrates buffered with two different low-k interlayers, namely SiO2 and Si3N4. Depositions have been carried out from a molten mixture consisting of the Ca (hfa)2 center dot tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme=2,5,8,11,14-pentaoxapentadecane; Htmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr=iso-propoxide] precursors. The chemical stability of CCTO films on both the SiO2 and Si3N4 low-k layers has been investigated by transmission electron microscopy in the perspective of their implementation in capacitor devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
