In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both <100> and <111> silicon substrates, using a completely optical measurement setup to measure the Q-factor of the resonators and the residual stress of the layers by means of purposely designed micromachined test structures. From the measurements, a clear correlation appears between the residual stress of the SiC layer and the Q-factor of the resonators, with Q-factor values above half a million for resonators fabricated on <111> substrates, showing residual stress around 1 GPa.

Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators

Sapienza, Sergio
;
Ferri, Matteo;Belsito, Luca;Marini, Diego;La Via, Francesco;Roncaglia, Alberto
2023

Abstract

In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both <100> and <111> silicon substrates, using a completely optical measurement setup to measure the Q-factor of the resonators and the residual stress of the layers by means of purposely designed micromachined test structures. From the measurements, a clear correlation appears between the residual stress of the SiC layer and the Q-factor of the resonators, with Q-factor values above half a million for resonators fabricated on <111> substrates, showing residual stress around 1 GPa.
2023
Istituto per la Microelettronica e Microsistemi - IMM
3C-SiC, MEMS, Q-Factor, Residual Stress
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/524234
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