Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon

In this work, the fabrication of wafer-level vacuum packaged 3C-SiC resonators obtained from layers grown on &lt;100&gt; and &lt;111&gt; silicon is reported. The resonant microstructures are double-clamped beams encapsulated by glass-silicon anodic bonding using titanium-based vacuum gettering. Open-loop resonance frequency measurements are performed on the vacuum-packaged devices showing Q-factor values up to 292,000 for &lt;100&gt; and 331,000 for &lt;111&gt; substrates, with a maximum vacuum level around 10-2 mbar inside the encapsulations with Ti getter.