In this work, the temperature dependence of the mobility along the c axis in silicon carbide (6H-SiC) was determined from the I-V characteristics of Schottky diodes. This procedure used series resistance measurements with Norde's method in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 3x10(15) cm(-3), at room temperature a value of 61 cm(2) V-1 s(-1) was found, which decreased to 24 cm(2) V-1 s(-1) at 448 K. In the temperature range 298-448 K, a dependence of the mobility as T-2.1 was determined. This result suggests that the lattice scattering, together with other mechanisms such as scattering with defects in the material, rule the carrier transport in this temperature range.
Temperature dependence of the c-axis mobility in 6H-SiC Schottky diodes
Roccaforte F;La Via F;Raineri V;
2003
Abstract
In this work, the temperature dependence of the mobility along the c axis in silicon carbide (6H-SiC) was determined from the I-V characteristics of Schottky diodes. This procedure used series resistance measurements with Norde's method in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 3x10(15) cm(-3), at room temperature a value of 61 cm(2) V-1 s(-1) was found, which decreased to 24 cm(2) V-1 s(-1) at 448 K. In the temperature range 298-448 K, a dependence of the mobility as T-2.1 was determined. This result suggests that the lattice scattering, together with other mechanisms such as scattering with defects in the material, rule the carrier transport in this temperature range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
