POGGI, ANTONELLA
POGGI, ANTONELLA
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN - Sede Secondaria Bologna
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices
2016 Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si
2012 Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M
beta-SiC NWs grown on patterned and MEMS silicon substrates
2011 Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers
2010 Anzalone, R; Camarda, M; Alquier, D; Italia, M; Severino, A; Piluso, N; La Magna, A; Foti, G; Locke, C; Saddow, Se; Roncaglia, A; Mancarella, F; Poggi, A; D'Arrigo, G; La Via, F
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes.
2009 Fabbri, F; Moscatelli, F; Poggi, A; Nipoti, R; Cavallini, A
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET
2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
2009 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications
2009 Bosi, M; Watts, B E; Attolini, G; Ferrari, C; Frigeri, C; Salviati, G; Poggi, A; Mancarella, F; Roncaglia, A; Martinez Sacristan, O; Hortelano, V
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation
2009 Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes
2009 Moscatelli, Francesco; Bergamini, Fabio; Poggi, Antonella; Passini, Mara; Tamarri, Fabrizio; Bianconi, Marco; Nipoti, Roberta
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes
2009 Moscatelli, F; Bergamini, F; Poggi, A; Passini, M; Tamarri, F; Bianconi, M; Nipoti, R
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s
2008 Poggi A; Moscatelli F; Solmi S; Nipoti R
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET
2008 Moscatelli F; Poggi A; Solmi S; Nipoti R
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation
2007 Moscatelli F; Scorzoni A; Poggi A; Nipoti R
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices | 1-gen-2016 | Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna | |
| Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si | 1-gen-2012 | Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M | |
| beta-SiC NWs grown on patterned and MEMS silicon substrates | 1-gen-2011 | Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella | |
| Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation | 1-gen-2010 | Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG | |
| Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs | 1-gen-2010 | Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L | |
| Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers | 1-gen-2010 | Anzalone, R; Camarda, M; Alquier, D; Italia, M; Severino, A; Piluso, N; La Magna, A; Foti, G; Locke, C; Saddow, Se; Roncaglia, A; Mancarella, F; Poggi, A; D'Arrigo, G; La Via, F | |
| Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer | 1-gen-2009 | Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G | |
| Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer | 1-gen-2009 | Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G | |
| C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. | 1-gen-2009 | Fabbri, F; Moscatelli, F; Poggi, A; Nipoti, R; Cavallini, A | |
| Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET | 1-gen-2009 | Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M | |
| Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET | 1-gen-2009 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G | |
| Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications | 1-gen-2009 | Bosi, M; Watts, B E; Attolini, G; Ferrari, C; Frigeri, C; Salviati, G; Poggi, A; Mancarella, F; Roncaglia, A; Martinez Sacristan, O; Hortelano, V | |
| Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation | 1-gen-2009 | Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella | |
| Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes | 1-gen-2009 | Moscatelli, Francesco; Bergamini, Fabio; Poggi, Antonella; Passini, Mara; Tamarri, Fabrizio; Bianconi, Marco; Nipoti, Roberta | |
| Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes | 1-gen-2009 | Moscatelli, F; Bergamini, F; Poggi, A; Passini, M; Tamarri, F; Bianconi, M; Nipoti, R | |
| Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s | 1-gen-2008 | Poggi A; Moscatelli F; Solmi S; Nipoti R | |
| Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET | 1-gen-2008 | Moscatelli F; Poggi A; Solmi S; Nipoti R | |
| Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process | 1-gen-2007 | Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R | |
| Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation | 1-gen-2007 | Moscatelli F; Scorzoni A; Poggi A; Nipoti R | |
| Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose | 1-gen-2007 | Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R |