POGGI, ANTONELLA
POGGI, ANTONELLA
Istituto per la Microelettronica e Microsistemi - IMM
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects
2002 Lazar, M; Raynaud, C; Planson, D; Locatelli, Ml; Isoird, K; Ottaviani, L; Chante, Jp; Nipoti, R; Poggi, A; Cardinali, G
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data
2003 Moscatelli, F; Scorzoni, A; Poggi, A; Cardinali, Gc; Nipoti, R
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation
2007 Moscatelli F; Scorzoni A; Poggi A; Nipoti R
beta-SiC NWs grown on patterned and MEMS silicon substrates
2011 Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella
C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes.
2009 Fabbri, F; Moscatelli, F; Poggi, A; Nipoti, R; Cavallini, A
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET
2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC
2005 Poggi, A; Parisini, A; Solmi, S; Nipoti, Roberta; R,
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC
2005 Poggi, A; Parisini, A; Solmi, S; Nipoti, R
Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications
2000 Lavacchi, A; Cortigiani, B; Rovida, G; Bardi, U; Atrei, A; Angelucci, R; Dori, L; Nicoletti, S; Poggi, A
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC
2004 Scorzoni, A; Moscatelli, F; Poggi, A; Cardinali, Gc; Nipoti, R
COPPER IMPURITIES AND THEIR ANNEALING BEHAVIOR IN FZ SILICON
1994 Adegboyega, Ga; Poggi, A
Correlation between current transport and defects in n+/p 6H-SiC diodes
2006 Canino, M; Castaldini, A; Cavallini, A; Moscatelli, F; Nipoti, R; Poggi, A
Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient
2006 Nipoti, R; Bergamin, F; Moscatelli, F; Poggi, A; Canino, M; Bertuccio, G
Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
1997 Adegboyega, G; Perezquintana, I; Poggi, A; Susi, E; Merli, M
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
2009 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G